High-performance and self-powered visible light photodetector using multiple coupled synergetic effects.

In this work, we demonstrate, for the first time, that coupling together the pyroelectric effect, the photovoltaic effect and the plasmonic effect is a novel method to significantly enhance the performance of self-powered photodetectors in the visible region. Photodetectors based on tri-layered heterojunction of n-Si/p-SnO/n-ZnO through the inclusion of silver (Ag) nanoparticles (NPs) at the SnO/ZnO interface were fabricated. The photo-response of the device, with excitation from a chopped 650 nm wavelength laser, was carefully investigated, and it was shown that the photodetector performance is enhanced the most with the inclusion of spheroidal Ag NPs with ∼70 nm diameter.

Disentangling the Role of the SnO Layer on the Pyro-Phototronic Effect in ZnO-Based Self-Powered Photodetectors.

Self-powered photodetectors (PDs) have been recognized as one of the developing trends of next-generation optoelectronic devices. Herein, it is shown that by introducing a thin layer of SnO film between the Si substrate and the ZnO film, the self-powered photodetector Al/Si/SnO/ZnO/ITO exhibits a stable and uniform violet sensing ability with high photoresponsivity and fast response. The SnO layer introduces a built-in electrostatic field to highly enhance the photocurrent by over 1000%.

9.1% efficient zinc oxide/silicon solar cells on a 50 μm thick Si absorber.

Today, silicon solar cells (amorphous films and wafer-based) are a main source of green energy. These cells and their components are produced by employing various technologies. Unfortunately, during the production process, chemicals that are harmful for the environment and for human life are used.

Impact of GaAs(100) surface preparation on EQE of AZO/AlO/p-GaAs photovoltaic structures.

In order to effectively utilize the photovoltaic properties of gallium arsenide, its surface/interface needs to be properly prepared. In the experiments described here we examined eight different paths of GaAs surface treatment (cleaning, etching, passivation) which resulted in different external quantum efficiency (EQE) values of the tested photovoltaic (PV) cells. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) examinations were conducted to obtain structural details of the devices.

Morphological, optical and photovoltaic characteristics of MoSe/SiO/Si heterojunctions.

This work reports the effect of different processing parameters on the structural and morphological characteristics of MoSe layers grown by chemical vapour deposition (CVD), using MoO and Se powders as solid precursors. It shows the strong dependence of the size, shape and thickness of the MoSe layers on the processing parameters. The morphology of the samples was investigated by field emission scanning electron microscopy (FESEM) and the thickness of the deposited layers was determined by atomic force microscopy (AFM).