Toxicological investigations in the semiconductor industry: II. Studies on the subacute inhalation toxicity and genotoxicity of gaseous waste products from the aluminum plasma etching process.

Male and female Wistar rats were exposed to waste gas arising from a plasma etching process in the semiconductor industries for six hr per day, five days per week, for four weeks in order to characterize subacute organ toxicity and genotoxicity. The waste gas was a complex mixture of different chlorinated hydrocarbons, inorganic by-products, and unused process gases, diluted by room air. Neither death nor behavioral changes occurred after subacute exposure.

Toxicological investigations in the semiconductor industry: I. Studies on the acute oral toxicity of a complex mixture of waste products from the aluminium plasma etching process.

In dry etching processes--one of the sources of potential exposure to toxic wastes in the semiconductor industry--complex mixtures of inorganic and organic compounds arise from reactions between feed stock gases (BCl3/Cl2), top layers (aluminium photoresist), and the carrier gas (N2). Two different fractions of the complex mixture--one an ethanolic solution (ES) and the other an insoluble liquid residue (LR)--were examined for acute oral toxicity in rats. Analytical data showed that the ethanol soluble fraction contained mainly inorganic compounds, whereas the residue contained various halogenated hydrocarbons.

[A rare complication of shunt therapy. Metastasis of brain tumors by cerebrospinal fluid drainage].

Shunting of cerebrospinal fluid to extracranial spaces has been a common and effective procedure for symptomatic therapy of hydrocephalus since the fifties. In 1954 the first spreading of tumor cells via a ventriculo-pleural shunt was reported. We are presenting a case of a 10 month old girl with a medulloblastoma of the lower brain stem with spreading of the intracranial tumor through a ventriculoperitoneal shunt.