Publications by authors named "K M Aishwarya"

In the present work, a convenient, efficient and disposable electrochemical sensor has been developed by electropolymerizing methylene blue (PMB) on the surface of a pencil graphite electrode (PGE), which facilitates the electrochemical analysis of an antioxidant l-Ascorbic Acid (AA). The structural characteristics of both the methylene blue modified pencil graphite electrode (PMB/PGE) and the bare pencil graphite electrode (BPGE) have been examined using scanning electron microscopy (SEM) in conjunction with energy-dispersive X-ray analysis (EDX). Additionally, the charge transfer behavior has been evaluated using the electron impedance spectroscopy (EIS).

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Aim: The study aimed to detect and quantify bisphenol A (BPA) leaching in salivary samples of patients undergoing clear aligner therapy (CAT) using four different commercially available sheets.

Materials And Methodology: Four different commercially available clear aligners namely Monoflex®, Erkodur®, Leone®, and Duran® were delivered to 20 volunteers who were grouped into ( = 5) group A, group B, group C, and group D, respectively. Salivary samples were collected immediately before aligner insertion (day 0) and at day 1, day 5, and day 7 after aligner wear.

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In this study, bismuth ferrite (BFO) and copper-added BFO were synthesized using the coprecipitation method. The incorporation of copper into the BFO lattice led to a reduction in the phase percentage of BFO due to the early formation of CuBiO. X-ray diffraction analysis revealed a decrease in crystallite size up to 0.

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The purest and unrestricted source of stem cells is the enamel of the teeth. Dental stem cells (DSCs), which are simple to get, quick to use, and reasonably priced, have the potential to be used in a variety of promising therapeutic applications. Due to their capacity for self-renewal, they are employed to treat significant flaws brought about by diseases, injuries, or surgical procedures.

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Semiconductor devices used in radiation environment are more prone to degradation in device performance. Junctionless Tunnel Field Effect Transistor (JLTFET) is one of the most potential candidates which overcomes the short channel effects and fabrication difficulties. In this work, 20 nm JLTFET is proposed with Silicon in the drain/channel region whereas source uses different materials, Silicon Germanium (SiGe), Gallium Nitride (GaN), Gallium Arsenide (GaAs), Indium Arsenide (InAs).

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