Nano-cones formation on a surface of Ge, Si crystals and Si1-xGe(x) solid solution by laser radiation.

The study of self-assembling nano-cones induced by irradiation of nanosecond Nd:YAG laser pulses on a surface of a Si1-xGe(x) solid solution is reported. It is shown that dynamics of nano-cones formation depends on concentration of Ge atoms (x) in Si lattice and on the intensity of laser radiation. Two different processes of nano-cones formation depending on x are observed.

Self-assembly of nanohills in Si1-xGe(x)/Si hetero-epitaxial structure due to Ge redistribution induced by laser radiation.

The study is focused on formation and optical properties of nanostructures induced by laser radiation on the surface of Si1-xGe(x)/Si hetero-structures. Formation of self-assembling nanohills induced by irradiation of nanosecond Nd:YAG laser pulses on the Si0.7Ge0.