Minimizing Sensor-Sample Distances in Scanning Nitrogen-Vacancy Magnetometry.

Scanning magnetometry with nitrogen-vacancy (NV) centers in diamond has led to significant advances in the sensitive imaging of magnetic systems. The spatial resolution of the technique, however, remains limited to tens to hundreds of nanometers, even for probes where NV centers are engineered within 10 nm from the tip apex. Here, we present a correlated investigation of the crucial parameters that determine the spatial resolution: the mechanical and magnetic stand-off distances, as well as the subsurface NV center depth in diamond.

Driving skyrmions in flow regime in synthetic ferrimagnets.

The last decade has seen significant improvements in our understanding of skyrmions current induced dynamics, along with their room temperature stabilization, however, the impact of local material inhomogeneities still remains an issue that impedes reaching the regime of steady state motion of these spin textures. Here, we study the spin-torque driven motion of skyrmions in synthetic ferrimagnetic multilayers with the aim of achieving high mobility and reduced skyrmion Hall effect. We consider Pt|Co|Tb multilayers of various thicknesses with antiferromagnetic coupling between the Co and Tb magnetization.

Electric-field-induced multiferroic topological solitons.

Topologically protected spin whirls in ferromagnets are foreseen as the cart-horse of solitonic information technologies. Nevertheless, the future of skyrmionics may rely on antiferromagnets due to their immunity to dipolar fields, straight motion along the driving force and ultrafast dynamics. While complex topological objects were recently discovered in intrinsic antiferromagnets, mastering their nucleation, stabilization and manipulation with energy-efficient means remains an outstanding challenge.

Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices.

As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies. Alternatively, magnetoelectric materials are predicted to enable low-power magnetization control, a solution with limited device-level results. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO and ferromagnetic CoFe, for writing, and spin-to-charge current conversion between CoFe and Pt, for reading.