Downscaling at submicrometer scale of the gap width of interdigitated Ba0.5Sr0.5TiO3 capacitors.

The goal of this work was to study the influence of shrinking the gap width between the fingers of interdigitated tunable capacitors (IDCs). Voltage control of the capacitance was achieved with a 500-nm-thick Ba0.5Sr0.

THz surface plasmon modes on planar Goubau lines.

The dispersion relation and confinement of terahertz surface plasmon modes propagating along planar Goubau lines are studied using guided-wave time domain spectroscopy. We demonstrate the radial nature of the surface plasmon mode known as the Goubau mode and the transverse confinement of the electric field over a few tenths of microns (~l/10). We experimentally and computationally observed a transition of the shape of the THz pulses from unipolar to bipolar as the propagation distance increases, indicating that the Goubau line acts as a high-pass filter.

Phase-locking of a 2.5 THz quantum cascade laser to a frequency comb using a GaAs photomixer.

We report the heterodyne detection and phase locking of a 2.5 THz quantum cascade laser (QCL) using a terahertz frequency comb generated in a GaAs photomixer using a femtosecond fiber laser. With 10 mW emitted by the QCL, the phase-locked signal at the intermediate frequency yields 80 dB of signal-to-noise ratio in a bandwidth of 1 Hz.

Recent Developments of an Opto-Electronic THz Spectrometer for High-Resolution Spectroscopy.

A review is provided of sources and detectors that can be employed in the THz range before the description of an opto-electronic source of monochromatic THz radiation. The realized spectrometer has been applied to gas phase spectroscopy. Air-broadening coefficients of HCN are determined and the insensitivity of this technique to aerosols is demonstrated by the analysis of cigarette smoke.

Materials with on-demand refractive indices in the terahertz range.

We demonstrate the possibility to create materials with chosen refractive indices and a strong birefringence in the terahertz range by etching of patterns with appropriate filling factors in a dielectric substrate. We show that by using deep inductive plasma etching of silicon wafers, it is possible to achieve a birefringence as high as 1.2 in an 80 microm thick layer.