Structure, Oxygen Content and Electric Properties of Titanium Nitride Electrodes in TiN/La:HfO/TiN Stacks Grown by PEALD on SiO/Si.

This work reports experimental results of the quantitative determination of oxygen and band gap measurement in the TiN electrodes in planar TiN top/La:HfO/TiN bottom MIM stacks obtained by plasma enhanced atomic layer deposition on SiO. Methodological aspects of extracting structural and chemical information from (scanning) transmission electron microscopy imaging (bright field and high angular annular dark field), energy dispersive X-ray spectrometry and electron energy loss spectroscopy are thoroughly considered. The study shows that the oxygen concentration is higher in the TiNO bottom electrode (about 14.

Metal silicide/poly-Si Schottky diodes for uncooled microbolometers.

: Nickel silicide Schottky diodes formed on polycrystalline Si 〈P〉 films are proposed as temperature sensors of monolithic uncooled microbolometer infrared focal plane arrays. The structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as a multi-phase compound composed of 20% to 40% of Ni3Si, 30% to 60% of Ni2Si, and 10% to 30% of NiSi with probable minor content of NiSi2 at the silicide/poly-Si interface.

Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity.

: Issues of Ge hut cluster array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Dynamics of the RHEED patterns in the process of Ge hut array formation is investigated at low and high temperatures of Ge deposition. Different dynamics of RHEED patterns during the deposition of Ge atoms in different growth modes is observed, which reflects the difference in adatom mobility and their 'condensation' fluxes from Ge 2D gas on the surface for different modes, which in turn control the nucleation rates and densities of Ge clusters.

Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED.

The Si(001) surface deoxidized by short annealing at T ~ 925°C in the ultrahigh vacuum molecuar beam epitaxy chamber has been in situ investigated using high-resolution scanning tunneling microscopy (STM)and redegreesected high-energy electron diffraction (RHEED. RHEED patterns corresponding to (2 × 1) and (4 × 4) structures were observed during sample treatment. The (4 × 4) reconstruction arose at T ≲ 600°C after annealing.

[The use of laser irradiation in nephrological practice].

The authors studied therapeutic potential and mechanism of action of low-intensity low-energy laser irradiating the skin at the site of the projection of the transplanted kidney poles through the development of chronic rejection or chronic pyelonephritis. The trial included 7 kidney recipients and 9 controls with primary chronic pyelonephritis. The treatment course implied 10 daily session of 20 minutes duration of He-Ne laser irradiation which was preceded by clinical-laboratory evaluation of the blood and urine, cellular and humoral immunity, hemostasis, central hemodynamics, local and mediator hormones, factors of nonspecific resistance, spin probe characteristics.