Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing.

The von Neumann architecture has faced challenges requiring high-fulfillment levels due to the performance gap between its processor and memory. Among the numerous resistive-switching random-access memories, the properties of hexagonal boron nitride (BN) have been extensively reported, but those of amorphous BN have been insufficiently explored for memory applications. Herein, we fabricated a Pt/BN/TiN device utilizing the resistive switching mechanism to achieve synaptic characteristics in a neuromorphic system.

Low-Frequency Noise-Based Mechanism Analysis of Endurance Degradation in Al/αTiO/Al Resistive Random Access Memory Devices.

In this work, we analyze a resistive switching random access memory (RRAM) device with the metal-insulator-metal structure of Al/αTiO/Al. The transport mechanism of our RRAM device is trap-controlled space-charge limited conduction, which does not change during the endurance test. As the number of resistive switching (RS) cycles increases, the current in the low-resistance state (LRS) does not change significantly.

Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices.

A three-terminal synaptic transistor enables more accurate controllability over the conductance compared with traditional two-terminal synaptic devices for the synaptic devices in hardware-oriented neuromorphic systems. In this work, we fabricated IGZO-based three-terminal devices comprising HfAlO and CeO layers to demonstrate the synaptic operations. The chemical compositions and thicknesses of the devices were verified by transmission electron microscopy and energy dispersive spectroscopy in cooperation.

Non-Volatile Memory and Synaptic Characteristics of TiN/CeO/Pt RRAM Devices.

In this study, we investigate the synaptic characteristics and the non-volatile memory characteristics of TiN/CeOx/Pt RRAM devices for a neuromorphic system. The thickness and chemical properties of the CeOx are confirmed through TEM, EDS, and XPS analysis. A lot of oxygen vacancies (ions) in CeOx film enhance resistive switching.

Enhanced Short-Term Memory Plasticity of WOx-Based Memristors by Inserting AlO Thin Layer.

ITO/WO/TaN and ITO/WO/AlO/TaN memory cells were fabricated as a neuromorphic device that is compatible with CMOS. They are suitable for the information age, which requires a large amount of data as next-generation memory. The device with a thin AlO layer deposited by atomic layer deposition (ALD) has different electrical characteristics from the device without an AlO layer.

Forming-Free Tunable Analog Switching in WO/TaO Heterojunction for Emulating Electronic Synapses.

In this work, the sputtered deposited WO/TaO switching layer has been studied for resistive random-access memory (RRAM) devices. Gradual SET and RESET behaviors with reliable device-to-device variability were obtained with DC voltage sweep cycling without an electroforming process. The memristor shows uniform switching characteristics, low switching voltages, and a high R/R ratio (~10).

Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic System.

We fabricated an ITO/ZnO/TaON/TaN device as nonvolatile memory (NVM) with resistive switching for complementary metal-oxide-semiconductor (CMOS) compatibility. It is appropriate for the age of big data, which demands high speed and capacity. We produced a TaON layer by depositing a ZnO layer on a TaN layer using an oxygen-reactive radio frequency (RF) sputtering system.