Exfoliable Transition Metal Chalcogenide Semiconductor NbSeI.

As the field of exfoliated van der Waals electronics grows to include complex heterostructures, the variety of available in-plane symmetries and geometries becomes increasingly valuable. In this work, we present an efficient chemical vapor transport synthesis of NbSeI with the triclinic space group 1̅. This material contains Nb-Nb dimers and an in-plane crystallographic angle γ = 61.

Third time's the charm: intricate non-centrosymmetric polymorphism in SiP ( = La and Ce) induced by distortions of phosphorus square layers.

Complex polymorphic relationships in the LnSiP3 (Ln = La and Ce) family of compounds are reported. An innovative synthetic method was developed to overcome differences in the reactivities of the rare-earth metal and refractory silicon with phosphorus. Reactions of atomically mixed Ln + Si with P allowed for selective control over the reaction outcomes resulting in targeted isolation of three new polymorphs of LaSiP3 and two polymorphs of CeSiP3.

New Noncentrosymmetric Tetrel Pnictides Composed of Square-Planar Gold(I) with Peculiar Bonding.

Three novel isostructural equiatomic gold tetrel pnictides, AuSiAs, AuGeP, and AuGeAs, were synthesized and characterized. These phases crystallize in the noncentrosymmetric (NCS) monoclinic space group Cc (no. 9), featuring square-planar Au within cis-[AuTt Pn ] units (Tt=tetrel, Si, Ge; Pn=pnictogen, P, As).

High Performance Metal Oxide Field-Effect Transistors with a Reverse Offset Printed Cu Source/Drain Electrode.

Nonvacuum and photolithography-free copper (Cu) films were prepared by reverse offset printing. The mechanical, morphological, structural, and chemical properties of the Cu films annealed at different temperatures were examined in detail. The Ostwald ripening-induced coalescence and grain growth in the printing Cu films were enhanced with increasing annealing temperature in N2 ambient up to 400 °C.