Intra-cavity frequency-doubled VECSEL system for narrow linewidth Rydberg EIT spectroscopy.

High-power, narrow-linewidth light sources in the visible and UV spectra are in growing demand, particularly as quantum information and sensing research proliferates. Vertical external-cavity surface-emitting lasers (VECSELs) with intra-cavity frequency conversion are emerging as an attractive platform to fill these needs. Using such a device, we demonstrate 3.

Watt-level blue light for precision spectroscopy, laser cooling and trapping of strontium and cadmium atoms.

High-power and narrow-linewidth laser light is a vital tool for atomic physics, being used for example in laser cooling and trapping and precision spectroscopy. Here we produce Watt-level laser radiation at 457.75 nm and 460.

Narrow-linewidth operation of folded 1178nm VECSEL with twisted-mode cavity.

A vertical external-cavity surface-emitting laser (VECSEL) with a twisted-mode configuration is demonstrated. This architecture is particularly advantageous for power scaling of single-frequency VECSELs employing multiple gain mirrors in folded cavities. In such a configuration, some of the gain mirrors are inherently at the fold, and the lasing spectrum becomes unstable.

Comparison of single-side and double-side pumping of membrane external-cavity surface-emitting lasers.

We studied and compared single-side pumping (SSP) and double-side pumping (DSP) of a semiconductor membrane external-cavity surface-emitting laser (MECSEL). The MECSEL-active region was based on an AlGaAs quantum well structure embedded between two silicon carbide (SiC) wafer pieces that were used as transparent intra-cavity (IC) heat spreaders creating a symmetrical cooling environment. The gain structure targeted emission at 780 nm, a wavelength region that is important for many applications, and where the development of high-brightness high-power laser sources is gaining more momentum.

AlGaAs-based vertical-external-cavity surface-emitting laser exceeding 4 W of direct emission power in the 740-790 nm spectral range.

An optically pumped vertical-external-cavity surface-emitting laser (VECSEL) for direct emission in the 740-790 nm wavelength region is reported. The gain structure is based on 12 AlGaAs quantum wells. We demonstrate wavelength tuning between 747 nm and 788 nm and free-running operation with a maximum power of 4.

1.4 µm continuous-wave diamond Raman laser.

The longest wavelength (~1.4 µm) emitted by a diamond Raman laser pumped by a semiconductor disk laser (SDL) is reported. The output power of the intracavity-pumped Raman laser reached a maximum of 2.

615 nm GaInNAs VECSEL with output power above 10 W.

A high-power optically-pumped vertical-external-cavity surface-emitting laser (VECSEL) generating 10.5 W of cw output power at 615 nm is reported. The gain mirror incorporated 10 GaInNAs quantum wells and was designed to have an emission peak in the 1230 nm range.

2-µm Tm:Lu₂O₃ ceramic disk laser intracavity-pumped by a semiconductor disk laser.

A proof-of-principle study of a 1.97-µm Tm:LuO ceramic disk laser, intracavity pumped by a 1.2-µm semiconductor disk laser, is presented.