Publications by authors named "Junxiao Yuan"
Defect single-photon emitters (SPE) in gallium nitride (GaN) have garnered great attentions in recent years due to the advantages they offer, including the ability to operate at room temperature, narrow emission linewidths, and high brightness. Nevertheless, the precise nature of the single-photon emission mechanism remains uncertain due to the multitude of potential defects that can form in GaN. In this work, our systematical investigation with the ab initio calculation indicates that carbon and silicon, as common dopants in gallium nitride, can interact with intrinsic defects in GaN and form new high-speed defect single-photon sources.
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- Defect-based single-photon emitters (SPEs) in gallium nitride (GaN) are promising for applications due to their advantages like high emission rates and room-temperature operation, but they face issues with the quenching effect.
- The study reveals that the quenching is linked to a structural transformation between two defect-pair configurations in GaN, where the transition from one stable structure to another occurs with a low energy barrier, making it prone to thermal fluctuations.
- Adjusting the triaxial compressive strain on the crystal can control the energy barrier between these structures, offering a strategy to mitigate quenching effects and enhance the potential for practical uses of SPEs.
Point defects in wide bandgap III-nitride semiconductors have been recently reported to be one kind of the most promising near-infrared (NIR) quantum emitters operating at room temperature (RT). But the identification of the point defect species and the energy level structures as well as the transition dynamics remain unclear. Here, the photophysical properties of single-photon emission from point defects in AlGaN films are investigated in detail.
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