Lanthanide Functionalized Carbon Quantum Dots for White Light Emission, pH Sensing, and Co (II) Detection.

Carbon quantum dots (CQDs) with fluorescence emission have been widely studied for versatile applications, but facile tunability of the spectral properties of CQDs by doping remains to be further explored. Herein, employing lanthanide ion Eu as a dopant and activator, a simple and efficient synthesis route for pure CQDs and Eu-CQDs was demonstrated using N, N-dimethylformamide, oleic acid, and oleylamine as precursors for carbon sources. In comparison, with the popular citric acid precursor, the as-prepared CQDs and Eu-CQDs exhibited an obviously smaller particle size (1.

Photoelectric Logic and Memory Transistors with Stepped Floating Gates of Perovskite Quantum Dots.

Electronic-Photonic integrated systems have attracted intensive attention in addressing the explosively increasing data-processing issue in the post-Moore era. However, the tremendous size difference between basic electronic and photonic units poses challenges for the further deep convergence of optoelectronic microprocessors. Here, we report a floating-gate transistor fabricated with complementary metal-oxide-semiconductor compatible technologies, which can realize multilevel photoelectric logic computing and memory simultaneously.

High-bandwidth light inputting multilevel photoelectric memory based on thin-film transistor with a floating gate of CsPbBr/CsPbI blend quantum dots.

The electronic-photonic convergent systems can overcome the data transmission bottleneck for microchips by enabling processor and memory chips with high-bandwidth optical input/output. However, current silicon-based electronic-photonic systems require various functional devices/components to convert high-bandwidth optical signals into electrical ones, thus making further integrations of sophisticated systems rather difficult. Here, we demonstrate thin-film transistor-based photoelectric memories employing CsPbBr/CsPbI blend perovskite quantum dots (PQDs) as a floating gate, and multilevel memory cells are achieved under programming and erasing modes, respectively, by imputing high-bandwidth optical signals.

Voltage-Polarity Dependent Programming Behaviors of Amorphous In-Ga-Zn-O Thin-Film Transistor Memory with an Atomic-Layer-Deposited ZnO Charge Trapping Layer.

Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT) memories are attracting many interests for future system-on-panel applications; however, they usually exhibit a poor erasing efficiency. In this article, we investigate voltage-polarity-dependent programming behaviors of an a-IGZO TFT memory with an atomic-layer-deposited ZnO charge trapping layer (CTL). The pristine devices demonstrate electrically programmable characteristics not only under positive gate biases but also under negative gate biases.