Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors.

The initial electrical characteristics and bias stabilities of thin-film transistors (TFTs) are vital factors regarding the practical use of electronic devices. In this study, the dependence of positive bias stress (PBS) instability on an initial threshold voltage (V) and its origin were analyzed by understanding the roles of slow and fast traps in solution-processed oxide TFTs. To control the initial V of oxide TFTs, the indium oxide (InO) semiconductor was doped with aluminum (Al), which functioned as a carrier suppressor.

Numerical Study on Overcoming the Light-Harvesting Limitation of Lead-Free CsAgBiBr Double Perovskite Solar Cell Using Moth-Eye Broadband Antireflection Layer.

Lead-free CsAgBiBr double perovskite has emerged as a promising new-generation photovoltaic, due to its non-toxicity, long carrier lifetime, and low exciton binding energies. However, the low power conversion efficiency, due to the high indirect bandgap (≈2 eV), is a challenge that must be overcome and acts as an obstacle to commercialization. Herein, to overcome the limitations through the light trapping strategy, we analyzed the performance evaluation via FDTD simulation when applying the moth-eye broadband antireflection (AR) layer on top of a CsAgBiBr double perovskite cell.

Atomically Thin Amorphous Indium-Oxide Semiconductor Film Developed Using a Solution Process for High-Performance Oxide Transistors.

High-performance oxide transistors have recently attracted significant attention for use in various electronic applications, such as displays, sensors, and back-end-of-line transistors. In this study, we demonstrate atomically thin indium-oxide (InO) semiconductors using a solution process for high-performance thin-film transistors (TFTs). To achieve superior field-effect mobility and switching characteristics in TFTs, the bandgap and thickness of the InO were tuned by controlling the InO solution molarity.

Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing.

The interest in low processing temperature for printable transistors is rapidly increasing with the introduction of a new form factor in electronics and the growing importance of high throughput. This paper reports the fabrication of low-temperature-processable enhancement-mode amorphous oxide thin-film transistors (TFTs) using the solution process. A facile low-pressure annealing (LPA) method is proposed for the activation of indium oxide (InO) semiconductors at a significantly low processing temperature of 200 °C.