Biomedical moral enhancement for psychopaths.

This study examines the ethical permissibility of biomedical moral enhancement (BME) for psychopaths, considering both coercive and voluntary approaches. To do so, I will first briefly explain what psychopaths are and some normative implications of these facts. I will then ethically examine three scenarios of BME for psychopaths: (1) coercive BME for non-criminal psychopaths, (2) coercive BME for psychopathic offenders, and (3) voluntary BME for psychopathic offenders.

Hybrid Photoiniferter and Ring-Opening Polymerization Yields One-Pot Anisotropic Nanorods.

Polymerization-induced self-assembly (PISA) has emerged as a scalable one-pot technique to prepare block copolymer (BCP) nanoparticles. Recently, a PISA process, that results in poly(l-lactide)-b-poly(ethylene glycol) BCP nanoparticles coined ring-opening polymerization (ROP)-induced crystallization-driven self-assembly (ROPI-CDSA), was developed. The resulting nanorods demonstrate a strong propensity for aggregation, resulting in the formation of 2D sheets and 3D networks.

Investigation of Program Efficiency Overshoot in 3D Vertical Channel NAND Flash with Randomly Distributed Traps.

The incremental step pulse programming slope (ISPP) with random variation was investigated by measuring numerous three-dimensional (3D) NAND flash memory cells with a vertical nanowire channel. We stored multiple bits in a cell with the ISPP scheme and read each cell pulse by pulse. The excessive tunneling from the channel to the storage layer determines the program efficiency overshoot.

Sensitivity of Inner Spacer Thickness Variations for Sub-3-nm Node Silicon Nanosheet Field-Effect Transistors.

The inner spacer thickness (T) variations in sub-3-nm, node 3-stacked, nanosheet field-effect transistors (NSFETs) were investigated using computer-aided design simulation technology. Inner spacer formation requires a high selectivity of SiGe to Si, which causes inevitable T variation (ΔT). The gate length (L) depends on the T.

Optimal Energetic-Trap Distribution of Nano-Scaled Charge Trap Nitride for Wider Window in 3D NAND Flash Using a Machine-Learning Method.

A machine-learning (ML) technique was used to optimize the energetic-trap distributions of nano-scaled charge trap nitride (CTN) in 3D NAND Flash to widen the threshold voltage () window, which is crucial for NAND operation. The energetic-trap distribution is a critical material property of the CTN that affects the window between the erase and program . An artificial neural network (ANN) was used to model the relationship between the energetic-trap distributions as an input parameter and the window as an output parameter.

Novel Modeling Approach to Analyze Threshold Voltage Variability in Short Gate-Length (15-22 nm) Nanowire FETs with Various Channel Diameters.

In this study, threshold voltage () variability was investigated in silicon nanowire field-effect transistors (SNWFETs) with short gate-lengths of 15-22 nm and various channel diameters () of 7, 9, and 12 nm. Linear slope and nonzero y-intercept were observed in a Pelgrom plot of the standard deviation of (σ), which originated from random and process variations. Interestingly, the slope and y-intercept differed for each , and σ was the smallest at a median of 9 nm.

Comparison of sampling methods in assessing the microbiome from patients with ulcerative colitis.

Background: Dysbiosis of ulcerative colitis (UC) has been frequently investigated using readily accessible stool samples. However, stool samples might insufficiently represent the mucosa-associated microbiome status. We hypothesized that luminal contents including loosely adherent luminal bacteria after bowel preparation may be suitable for diagnosing the dysbiosis of UC.

PROKR1 delivery by cell-derived vesicles restores the myogenic potential of Prokr1-deficient C2C12 myoblasts.

Cell-derived vesicles (CDVs) have been investigated as an alternative to exosomes. Here, we generated CDVs from Prokineticin receptor 1 (PROKR1) overexpressing HEK293T cells using micro-extrusion. More than 60 billion PROKR1-enriched CDV (PROKR1 CDVs) particles with canonical exosome properties were recovered from 10 cells.

Threshold Voltage Variations Induced by SiGe and SiC of Sub 5-nm Node Silicon Nanosheet Field-Effect Transistors.

In this paper, we investigated the threshold voltage () variations in sub 5-nm node silicon nanosheet FETs (NSFETs) caused by Ge and C diffusion into NS channels using fully-calibrated 3-D TCAD simulation. Ge (C) atoms of SiGe (SiC) source/drain (S/D) diffuse toward the NS channels in lateral direction in -type (-type) FETs, and Ge atoms of SiGe stacks diffuse toward the NS channels in vertical direction. Increasing Ge mole fraction of the SiGe S/D in the -type FETs (PFETs) causing increasing compressive channel stress retards boron dopants diffusing from the SiGe S/D into the NS channels, thus increasing the of PFETs ().

Overcoming ineffective resistance modulation in p-type NiO gas sensor by nanoscale Schottky contacts.

We present a gas sensor having nanoscale Schottky contacts on an array of helical-shaped p-type NiO to overcome intrinsically ineffective resistance modulation in the bulk of p-type metal oxides upon gas exposure. The Schottky device shows an abnormal n-type sensing behavior despite using the p-type NiO under reducing gas, with the sensitivity of 142.9% at 200 ppm of hydrogen, much higher than the reference Ohmic device with 0.

Core-shell homojunction silicon vertical nanowire tunneling field-effect transistors.

We propose three-terminal core-shell (CS) silicon vertical nanowire tunneling field-effect transistors (TFETs), which can be fabricated by conventional CMOS technology. CS TFETs show lower subthreshold swing (SS) and higher on-state current than conventional TFETs through their high surface-to-volume ratio, which increases carrier-tunneling region with no additional device area. The on-state current can be enhanced by increasing the nanowire height, decreasing equivalent oxide thickness (EOT) or creating a nanowire array.