ACS Appl Mater Interfaces
September 2024
In single-shot speckle projection profilometry (SSPP), the projected speckle inevitably undergoes changes in shape and size due to variations such as viewing angles, complex surface modulations of the test object and different projection ratios. These variations introduce randomness and unpredictability to the speckle features, resulting in erroneous or missing feature extraction and subsequently degrading 3D reconstruction accuracy across the tested surface. This work strives to explore the relationship between speckle size variations and feature extraction, and address the issue solely from the perspective of network design by leveraging specific variations in speckle size without expanding the training set.
View Article and Find Full Text PDFThe three-dimensional (3D) measurement task of complex microstructures holds paramount significance in the domains of precision manufacturing and inspection. The calibration of the 3D system heavily determines the final reconstruction accuracy. The widely adopted system calibration method is phase-height mapping (PHM) and stereo vision (SV) based.
View Article and Find Full Text PDFSci Total Environ
December 2023
Extreme climate events have increased in frequency and severity under the background of climate change, with vegetation growth exhibiting a sensitive response to them. By assimilating GIMMS NDVI and MODIS NDVI using the Residual Network, we obtained a long time series and high resolution NDVI dataset of the Yellow River Basin (YRB). The dataset was utilized for examining the spatiotemporal variability of NDVI and analyzing the response of vegetation cover to climate extremes with meteorological data.
View Article and Find Full Text PDFPerovskite/silicon tandem solar cells are promising avenues for achieving high-performance photovoltaics with low costs. However, the highest certified efficiency of perovskite/silicon tandem devices based on economically matured silicon heterojunction technology (SHJ) with fully textured wafer is only 25.2% due to incompatibility between the limitation of fabrication technology which is not compatible with the production-line silicon wafer.
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