Structural properties of phase-change InSbTe thin films grown at a low temperature by metalorganic chemical vapor deposition.

The feasibility of new InSbTe (IST) chalcogenide materials at the deposition temperatures of 225 and 250 degrees C using metalorganic chemical vapor deposition (MOCVD) for phase-change random access memory (PRAM) applications was investigated. Samples grown at 225 degrees C consisted of the main InTe phase, including a small amount of Sb. On the other hand, samples grown at 250 degrees C included the crystalline phases of InSb and InSbTe.

Phase-change InSbTe nanowires grown in situ at low temperature by metal-organic chemical vapor deposition.

Phase-change InSbTe (IST) single crystalline nanowires were successfully synthesized at a low temperature of 250 degrees C by metalorganic chemical vapor deposition (MOCVD). The growth of IST nanowires by MOCVD, at very high working pressure, was governed by supersaturation. The growth mechanism of the IST nanowires by MOCVD is addressed in this paper.

Nanocluster deposition for oxide thin film growth at near room temperature.

Metal-organic chemical vapor deposition (MOCVD) at near room temperature would not only enable integration of oxide films on polymers but would provide the capability of conformal coating of high-aspect ratio features required for fabrication of many micro-and nanoelectronic devices. The concept of near room temperature MOCVD (nanocluster deposition: NCD) consists of the production of a single phase with nanosized crystalline nuclei by a chemical vapor reaction at the showerhead maintained above the decomposition temperature of the precursors and consequently deposition of the nanosized crystalline films on unheated substrates. Deposition of the nanosized crystalline nuclei on unheated substrates was performed by controlling both the showerhead temperature and the working pressure.