Publications by authors named "Junhai Ren"

Two-dimensional van der Waals (vdW) layered materials not only are an intriguing fundamental scientific research platform but also provide various applications to multifunctional quantum devices in the field-effect transistors (FET) thanks to their excellent physical properties. However, a metal-semiconductor (MS) interface with a large Schottky barrier causes serious problems for unleashing their intrinsic potentials toward the advancements in high-performance devices. Here, we show that exfoliated vdW Dirac semimetallic PtTe can be an excellent electrode for electrons in MoS FETs.

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Defects are of significant importance to determine and improve the distinct properties of 2D materials, such as electronic, optical, and catalytic performance. In this report, we observe four types of point defects in atomically thin flakes of 1T-PtTe by using low-temperature scanning tunnelling microscopy and spectroscopy (STM/S). Through the combination of STM imaging and simulations, such defects are identified as a single tellurium vacancy from each side of the top PtTe layer and a single platinum vacancy from the topmost and next layer.

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Hydrogen atoms bonded within molecular cavities often undergo tunneling or thermal-transfer processes that play major roles in diverse physical phenomena. Such transfers may or may not entail intermediate states. The existence of such fleeting states is typically determined by indirect means, while their direct visualization has not been achieved, largely because their concentrations under equilibrium conditions are negligible.

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