Enhanced Deposition Selectivity of High- Dielectrics by Vapor Dosing and Selective Removal of Phosphonic Acid Inhibitors.

Area-selective atomic layer deposition (AS-ALD), which provides a bottom-up nanofabrication method with atomic-scale precision, has attracted a great deal of attention as a means to alleviate the problems associated with conventional top-down patterning. In this study, we report a methodology for achieving selective deposition of high- dielectrics by surface modification through vapor-phase functionalization of octadecylphosphonic acid (ODPA) inhibitor molecules accompanied by post-surface treatment. A comparative evaluation of deposition selectivity of ZrO thin films deposited with the O and O reactants was performed on SiO, TiN, and W substrates, and we confirmed that high enough deposition selectivity over 10 nm can be achieved even after 200 cycles of ALD with the O reactant.

Silicon Oxide Etching Process of NF and FNO Plasmas with a Residual Gas Analyzer.

The use of NF is significantly increasing every year. However, NF is a greenhouse gas with a very high global warming potential. Therefore, the development of a material to replace NF is required.