Easy Access to NO2 -Containing Donor-Acceptor-Acceptor Electron Donors for High Efficiency Small-Molecule Organic Solar Cells.

Two donor-acceptor-acceptor (D-A-A)-type molecules incorporating nitrobenzoxadiazole (NBO) as the A-A block and ditolylamine as the D block bridged through a phenylene (PNBO) and a thiophene (TNBO) spacer were synthesized in a one-step coupling reaction. Their electronic, photophysical, and thermal properties; crystallographic analysis; and theoretical calculations were studied to establish a clear structure-property relationship. The results indicate that the quinoidal character of the thiophene bridge strongly governs the structural features and crystal packings (herringbone vs.

Catalytically solid-phase self-organization of nanoporous SnS with optical depolarizability.

The catalytic solid-phase synthesis of self-organized nanoporous tin sulfide (SnS) with enhanced absorption, manipulative transmittance and depolarization features is demonstrated. Using an ultralow radio-frequency (RF) sputtering power, the variation of the orientation angle between the anodized aluminum oxide (AAO) membrane and the axis of the sputtered ion beam detunes the catalytically synthesized SnS from nanorod to nanoporous morphology, along the sidewall of the AAO membrane. The ultraslow catalytic sputtering synthesis on the AAO at the RF plasma power of 20 W and the orientation angle of 0° regulates the porosity and integrality of nanoporous SnS, with average pore diameter of 80-150 nm.

Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions.

The epitaxy of high-power gallium nitride (GaN) light-emitting diode (LED) on amorphous silicon carbide (a-SixC(1-x)) buffer is demonstrated. The a-SixC(1-x) buffers with different nonstoichiometric C/Si composition ratios are synthesized on SiO2/Si substrate by using a low-temperature plasma enhanced chemical vapor deposition. The GaN LEDs on different SixC(1-x) buffers exhibit different EL and C-V characteristics because of the extended strain induced interfacial defects.

Solution-processed transparent blue organic light-emitting diodes with graphene as the top cathode.

Graphene thin films have great potential to function as transparent electrodes in organic electronic devices, due to their excellent conductivity and high transparency. Recently, organic light-emitting diodes (OLEDs)have been successfully demonstrated to possess high luminous efficiencies with p-doped graphene anodes. However, reliable methods to fabricate n-doped graphene cathodes have been lacking, which would limit the application of graphene in flexible electronics.

A solution-processed molybdenum oxide treated silver nanowire network: a highly conductive transparent conducting electrode with superior mechanical and hole injection properties.

We demonstrate the fabrication of solution-processed MoOx-treated (s-MoOx) silver nanowire (AgNW) transparent conductive electrodes (TCEs) utilizing low-temperature (sub-100 °C) processes. The s-MoOx aggregates around the AgNW and forms gauze-like MoOx thin films between the mesh, which can effectively lower the sheet resistance by more than two orders of magnitude. Notably, these s-MoOx-treated AgNW TCEs exhibit a combination of several promising characteristics, such as a high and broad transmittance across a wavelength range of 400 to 1000 nm, transmission of up to 96.

Alternating current driven organic light emitting diodes using lithium fluoride insulating layers.

We demonstrate an alternating current (AC)-driven organic light emitting diodes (OLED) with lithium fluoride (LiF) insulating layers fabricated using simple thermal evaporation. Thermal evaporated LiF provides high stability and excellent capacitance for insulating layers in AC devices. The device requires a relatively low turn-on voltage of 7.

Effect of ITO surface modification on the OLED device lifetime.

Pretreatment of the indium tin oxide (ITO) surface is generally adopted to improve the charge injection and device performance in the fabrication of organic light-emitting diodes (OLEDs). For the common approaches of surface treatment, such as oxygen plasma treatment, self-assembled monolayer (SAM) adsorption, and the PEDOT:PSS coating, different effects on the device lifetime were observed. A distinctly different driving voltage change with device operation time was obtained and was correlated with the device lifetime.

Formation of perfect ohmic contact at indium tin oxide/N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine interface using ReO3.

A perfect ohmic contact is formed at the interface of indium tin oxide (ITO) and N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB) using ReO3 as the interfacial layer. The hole injection efficiency is close to 100% at the interface, which is much higher than those for interfacial layers of 1,4,5,8,9,11-hexaazatripheylene hexacarbonitrile (HAT-CN) and MoO3. Interestingly, the ReO3 and MoO3 interfacial layers result in the same hole injection barrier, ≈0.