X-band MMICs for a Low-Cost Radar Transmit/Receive Module in 250 nm GaN HEMT Technology.

This paper describes Monolithic Microwave Integrated Circuits (MMICs) for an X-band radar transceiver front-end implemented in 0.25 μm GaN High Electron Mobility Transistor (HEMT) technology. Two versions of single pole double throw (SPDT) T/R switches are introduced to realize a fully GaN-based transmit/receive module (TRM), each of which achieves an insertion loss of 1.

A Direct Feedback FVF LDO for High Precision FMCW Radar Sensors in 65-nm CMOS Technology.

A direct feedback flipped voltage follower (FVF) LDO for a high-precision frequency-modulated continuous-wave (FMCW) radar is presented. To minimize the effect of the power supply ripple on the FMCW radar sensor's resolution, a folded cascode error amplifier (EA) was connected to the outer loop of the FVF to increase the open-loop gain. The direct feedback structure enhances the PSRR while minimizing the power supply ripple path and not compromising a transient response.

A 78.8-84 GHz Phase Locked Loop Synthesizer for a W-Band Frequency-Hopping FMCW Radar Transceiver in 65 nm CMOS.

A W-band integer-N phase-locked loop (PLL) for a frequency hopping frequency modulation continuous wave (FMCW) radar is implemented in 65-nm CMOS technology. The cross-coupled voltage-controlled oscillator (VCO) was designed based on a systematic analysis of the VCO combined with its push-pull buffer to achieve high efficiency and high output power. To provide a frequency hopping functionality without any overhead in the implementation, the center frequency of the VCO is steeply controlled by the gate voltage of the buffer, which effectively modifies the susceptance of the VCO load.

A 90 GHz Broadband Balanced 8-Way Power Amplifier for High Precision FMCW Radar Sensors in 65-nm CMOS.

We present a W-band 8-way wideband power amplifier (PA) for a high precision frequency modulated continuous wave (FMCW) radar in 65-nm CMOS technology. To achieve a broadband operation with an improved output power for a high range resolution and high distance coverage of FMCW radar sensors, a balanced architecture is employed with the Lange coupler which naturally combines the output powers from two 4-way push-pull PAs. By utilizing a transformer-based push-pull structure with a cross-coupled capacitive neutralization technique, the gate-drain capacitance of the 4-way PA is compensated for the stabilization with an improved power gain.

An X-band Bi-Directional Transmit/Receive Module for a Phased Array System in 65-nm CMOS.

We present an X-band bi-directional transmit/receive module (TRM) for a phased array system utilized in radar-based sensor systems. The proposed module, comprising a 6-bit phase shifter, a 6-bit digital step attenuator, and bi-directional gain amplifiers, is fabricated using 65-nm CMOS technology. By constructing passive networks in the phase-shifter and the variable attenuator, the implemented TRM provides amplitude and phase control with 360° phase coverage and 5.

The Smallest Form Factor UWB Antenna with Quintuple Rejection Bands for IoT Applications Utilizing RSRR and RCSRR.

In this paper, we present the smallest form factor microstrip-fed ultra-wideband antenna with quintuple rejection bands for use in wireless sensor networks, mobile handsets, and Internet of things (IoT). Five rejection bands have been achieved at the frequencies of 3.5, 4.

A Compact Multiple Notched Ultra-Wide Band Antenna with an Analysis of the CSRR-TO-CSRR Coupling for Portable UWB Applications.

We present a compact ultra-wideband (UWB) antenna integrated with sharp notches with a detailed analysis of the mutual coupling of the multiple notch resonators. By utilizing complementary split ring resonators (CSRR) on the radiating semi-circular patch, we achieve the sharp notch-filtering of various bands within the UWB band without increasing the antenna size. The notched frequency bands include WiMAX, INSAT, and lower and upper WLAN.

Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices.

Because of the "Boltzmann tyranny" (i.e., the nonscalability of thermal voltage), a certain minimum gate voltage in metal-oxide-semiconductor (MOS) devices is required for a 10-fold increase in drain-to-source current.

Reliability of the pinch strength with digitalized pinch dynamometer.

Objective: To examine the intra-rater, inter-rater, and inter-instrumental reliability of the digitalized pinch muscle strength dynamometer.

Method: Thirty normal subjects were examined for pinch strength, using both the Preston pinch gauge and the digitalized pinch dynamometer. The participants performed all pinch strength tests in the seated position as recommended by the American Society of Hand Therapists (ASHT).