Large Tunable Spin-to-Charge Conversion in NiFe/Molybdenum Disulfide by Cu Insertion.

Spin-to-charge conversion at the interface between magnetic materials and transition metal dichalcogenides has drawn great interest in the research efforts to develop fast and ultralow power consumption devices for spintronic applications. Here, we report room temperature observations of spin-to-charge conversion arising from the interface of NiFe (Py) and molybdenum disulfide (MoS). This phenomenon can be characterized by the inverse Edelstein effect length (λ), which is enhanced with decreasing MoS thicknesses, demonstrating the dominant role of spin-orbital coupling (SOC) in MoS.

Epitaxial Growth and Characterization of Nanoscale Magnetic Topological Insulators: Cr-Doped (BiSb)Te.

The exploration initiated by the discovery of the topological insulator (BiSb)Te has extended to unlock the potential of quantum anomalous Hall effects (QAHEs), marking a revolutionary era for topological quantum devices, low-power electronics, and spintronic applications. In this study, we present the epitaxial growth of Cr-doped (BiSb)Te (Cr:BST) thin films via molecular beam epitaxy, incorporating various Cr doping concentrations with varying Cr/Sb ratios (0.025, 0.

Structural and Optical Properties of Tungsten Disulfide Nanoscale Films Grown by Sulfurization from W and WO.

Tungsten disulfide (WS) was prepared from W metal and WO by ion beam sputtering and sulfurization in a different number of layers, including monolayer, bilayer, six-layer, and nine-layer. To obtain better crystallinity, the nine-layer of WS was also prepared from W metal and sulfurized in a furnace at different temperatures (800, 850, 900, and 950 °C). X-ray diffraction revealed that WS has a 2-H crystal structure and the crystallinity improved with increasing sulfurization temperature, while the crystallinity of WS sulfurized from WO (WS-WO) is better than that sulfurized from W-metal (WS-W).

Epitaxial Growth and Structural Characterizations of MnBiTe Thin Films in Nanoscale.

The intrinsic magnetic topological insulator MnBiTe has attracted much attention due to its special magnetic and topological properties. To date, most reports have focused on bulk or flake samples. For material integration and device applications, the epitaxial growth of MnBiTe film in nanoscale is more important but challenging.