Estimating the effect of latent time-varying count exposures using multiple lists.

A major challenge in longitudinal built-environment health studies is the accuracy of commercial business databases that are used to characterize dynamic food environments. Different databases often provide conflicting exposure measures on the same subject due to different source credibilities. As on-site verification is not feasible for historical data, we suggest combining multiple databases to correct the bias in health effect estimates due to measurement error in any 1 datasource.

INTEGRATING MULTIPLE BUILT ENVIRONMENT DATA SOURCES.

Studies examining the contribution of the built environment to health often rely on commercial data sources to derive exposure measures such as the number of specific food outlets in study participants' neighborhoods. Data on the location of community amenities (e.g.

Moiré-free fingerprint sensors based on multilayer oxide-metal-oxide electrodes.

The display quality of touchscreen devices with on-screen fingerprint sensors is reduced by moiré patterns, interference phenomena caused by an overlap between the pixel pattern of the display, and the electrode pattern of the fingerprint sensor. A promising strategy for resolving this issue is to reduce the visibility of the moiré pattern, by including a filling layer with a transmittance similar to that of the electrodes, between the different patterns. We propose a moiré-free fingerprint sensor that uses an oxide-metal-oxide (IZO/Ag/IZO) multilayer as a highly transparent electrode.

Correction: Direct characterization of graphene doping state by in situ photoemission spectroscopy with Ar gas cluster ion beam sputtering.

Correction for 'Direct characterization of graphene doping state by in situ photoemission spectroscopy with Ar gas cluster ion beam sputtering' by Dong-Jin Yun et al., Phys. Chem.

Direct characterization of graphene doping state by in situ photoemission spectroscopy with Ar gas cluster ion beam sputtering.

On the basis of an in situ photoemission spectroscopy (PES) system, we propose a novel, direct diagnosis method for the characterization of graphene (Gr) doping states at organic semiconductor (OSC)/electrode interfaces. Our in situ PES system enables ultraviolet/X-ray photoelectron spectroscopy (UPS/XPS) measurements during the OSC growth or removal process. We directly deposit C films on three different p-type dopants-gold chloride (AuCl), (trifluoromethyl-sulfonyl)imide (TFSI), and nitric acid (HNO).

Chemically Homogeneous and Thermally Robust NiPtSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition.

To synthesize a thermally robust NiPtSi film suitable for ultrashallow junctions in advanced metal-oxide-semiconductor field-effect transistors, we used a continuous laser beam to carry out millisecond annealing (MSA) on a preformed Ni-rich silicide film at a local surface temperature above 1000 °C while heating the substrate to initiate a phase transition. The melting and quenching process by this unique high-temperature MSA process formed a NiPtSi film with homogeneous Pt distribution across the entire film thickness. After additional substantial thermal treatment up to 800 °C, the noble NiPtSi film maintained a low-resistive phase without agglomeration and even exhibited interface flattening with the underlying Si substrate.

Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells.

We discuss the influence of V-pits and their energy barrier, originating from its facets of (101¯1) planes, on the luminescence efficiency of InGaN LEDs. Experimental analysis using cathodoluminescence (CL) exhibits that thin facets of V-pits of InGaN quantum wells (QWs) appear to be effective in improving the emission intensity, preventing the injected carriers from recombining non-radiatively with threading dislocations (TDs). Our theoretical calculation based on the self-consistent approach with adopting k⋅p method reveals that higher V-pit energy barrier heights in InGaN QWs more efficiently suppress the non-radiative recombination at TDs, thus enhancing the internal quantum efficiency (IQE).