Effects of High Temperature and High Pressure on the Photoluminescence of CdTe Quantum Dots: Implication for the High-Temperature Resistance Application of Nano-Stress Sensing Materials.

Nano-sized quantum dots (QDs) have the potential for the application of stress sensing materials based on their pressure-sensitive photoluminescence (PL) properties, while the influence of a more realistic loading environment on the PL characteristics of QDs under a high-temperature environment remains to be further studied. Herein, we studied the PL response of CdTe QDs under repetitive loading-unloading conditions under high-temperature coupling to explore the stability of its high temperature stress sensing potential. The results show that the CdTe QDs with size of 3.