Design of High-Power and High-Density Photovoltaic Modules Based on a Shingled Cell String.

Building-integrated photovoltaic (BIPV) arrays, which are installed on the roofs of buildings as part of urban solar power generation, have created a demand for high-power and high-density photovoltaic (PV) modules to produce high-output power in a limited area. In this paper, a high-power PV module using a shingles technology is designed. When the vertical and horizontal dimensions of the module were 201.

The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiO as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide.

We fabricated the transparent non-volatile memory (NVM) of a bottom gate thin film transistor (TFT) for the integrated logic devices of display applications. The NVM TFT utilized indium-tin-zinc-oxide (ITZO) as an active channel layer and multi-oxide structure of SiO (blocking layer)/Si-rich SiO (charge trapping layer)/SiON (tunneling layer) as a gate insulator. The insulators were deposited using inductive coupled plasma chemical vapor deposition, and during the deposition, the trap states of the Si-rich SiOx charge trapping layer could be controlled to widen the memory window with the gas ratio (GR) of SiH:NO, which was confirmed by fourier transform infrared spectroscopy (FT-IR).

Temperature-dependent electrical characteristics of c-Si and CIGS solar cells.

We characterized the electrical behavior of crystalline silicon (c-Si) and Cu(In(1-x)Ga(x))Se2 (CIGS) solar cells by current-voltage (I-V) and capacitance-voltage (C-V) methods. We investigated the temperature-dependent carrier transport mechanism by determining the parameters of ideality factor (n) and activation energy (E(a)) deduced from I-V measurements. CLGS solar cells, as a function of temperature, showed drastic changes in n and E(a) in the space charge region (SCR) that forms near the ZnS/CIGS interface.