Fabrication of atomic junctions with experimental parameters optimized using ground-state searches of Ising spin computing.

Feedback-controlled electromigration (FCE) is employed to control metal nanowires with quantized conductance and create nanogaps and atomic junctions. In the FCE method, the experimental parameters are commonly selected based on experience. However, optimization of the parameters by way of tuning is intractable because of the impossibility of attempting all different combinations systematically.

Gesture Prediction Using Wearable Sensing Systems with Neural Networks for Temporal Data Analysis.

A human gesture prediction system can be used to estimate human gestures in advance of the actual action to reduce delays in interactive systems. Hand gestures are particularly necessary for human⁻computer interaction. Therefore, the gesture prediction system must be able to capture hand movements that are both complex and quick.

Quantifying Joule Heating and Mass Transport in Metal Nanowires During Controlled Electromigration.

The nanoscale heat dissipation (Joule heating) and mass transport during electromigration (EM) have attracted considerable attention in recent years. Here, the EM-driven movement of voids in gold (Au) nanowires of different shapes (width range: 50⁻300 nm) was directly observed by performing atomic force microscopy. Using the data, we determined the average mass transport rate to be 10⁵ to 10⁶ atoms/s.

Control parameters for fabrication of single-electron transistors using field-emission-induced electromigration.

We report a simple method for the control of electrical characteristics of planar-type metal-based single-electron transistors (SETs) using field-emission-induced electromigration. The advantages of this method are as follows: (1) the fabrication of SETs is achieved by only passing a field emission current through a nanogap and (2) the charging energy of SETs can be controlled by adjusting the magnitude of the applied current during the procedure. In order to better control the electrical properties of the SETs, we investigate the relation between control parameters of the method and electrical characteristics of the SETs.

Formation scheme of quantum point contacts based on nanogaps using field-emission-induced electromigration.

We propose a new fabrication scheme of quantum point contacts (QPCs) composed of nanogaps at room temperature. This scheme is based on electromigration induced by a field emission current, which is so-called "activation." By applying the activation to ferromagnetic Ni nanogaps with sub-10 nm separation, QPCs can be easily obtained at room temperature.

Tuning of tunnel resistance of nanogaps by field-emission-induced electromigration using current source mode.

A newly investigated technique for the tuning of the tunnel resistance of nanogaps using electromigration method induced by a field emission current is presented to reduce the power consumption during the process. The method is called "activation" and is demonstrated with a current source. Planar-type initial nanogaps of Ni separated by 20-80 nm were defined on SiO2/Si substrates via electron-beam lithography and the lift-off process.

Integration of single-electron transistors using field-emission-induced electromigration.

A novel technique for the integration of planar-type single-electron transistors (SETs) composed of nanogaps is presented. This technique is based on the electromigration procedure, which is caused by a field emission current. The technique is called "activation.

Influence of feedback parameters on resistance control of metal nanowires by stepwise feedback-controlled electromigration.

We propose a stepwise feedback-controlled electromigration (SFCE) approach to control the channel resistance of metal nanowires at room temperature. SFCE procedure finely divides a conventional feedback-controlled electromigration (FCE) scheme into several FCE cycles. This approach effectively removes thermal instability caused by large current passing through a metal nanowire, because process time of each FCE cycle can be successfully reduced.

Fabrication of single-electron transistors using field-emission-induced electromigration.

We report a novel technique for the fabrication of planar-type Ni-based single-electron transistors (SETs) using electromigration method induced by field emission current. The method is so-called "activation" and is demonstrated using arrow-shaped Ni nanogap electrodes with initial gap separations of 21-68 nm. Using the activation method, we are easily able to obtain the SETs by Fowler-Nordheim (F-N) field emission current passing through the nanogap electrodes.

10 micrometer-scale SPM local oxidation lithography.

10 micrometer-scale scanning probe microscopy (SPM) local oxidation lithography was performed on Si. In order to realize large-scale oxidation, an SPM tip with a contact length of 15 microm was prepared by focused-ion-beam (FIB) etching. The oxidation was carried out in contact mode operation with the contact force ranging from 0.

Scanning probe microscope lithography at the micro- and nano-scales.

Scanning probe microscopy (SPM)-based lithography at the micro- and nano-scales is presented. Our method in SPM local oxidation involves two SPM tips, one having a robust blunt tip, a "micrometer tip," and the other having a sharp tip, a "nanometer tip." In tapping-mode SPM local oxidation experiments, Si oxide wires with sub-10 nm resolution were produced by precisely tuning the dynamic properties of the nanometer tip such as drive amplitude and quality factor.

Nanomachining of permalloy for fabricating nanoscale ferromagnetic structures using atomic force microscopy.

It is well-known that the tip of an Atomic Force Microscope (AFM) can act as a cutting tool for machining various types of materials. In this article, AFM machining experiments have been conducted to investigate the machining characteristics of a nickel-iron thin film material. The influences of the machining parameters on the resulting machined geometries and surfaces are specifically investigated.