Enhanced density control of Al:ZnO nanowires via one-by-one coupling of nanowires and pyramids.

Al doped ZnO nanowire arrays with controlled growth densities were fabricated on silicon without using catalysts via sputtering followed by thermal chemical vapor deposition (CVD). Scanning electron microscopy and high-resolution transmission electron microscopy results show that the Al:ZnO single-crystalline nanowires synthesized by CVD prefer growing epitaxially on the tips of the ZnO pyramids pre-synthesized by sputtering with the c-axis perpendicular to the substrate. Consequently, the densities of the as-grown Al:ZnO nanowires were controllable by changing the particle densities of the pre-grown ZnO seed layers.