Surface-emitting organic light-emitting transistors (OLETs) could well be a core element in the next generation of active-matrix (AM) displays. We report some of the key characteristics of graphene-based vertical-type organic light-emitting transistors (Gr-VOLETs) composed of a single-layer graphene source and an emissive channel layer. It is shown that FeCl doping of the graphene source results in a significant improvement in the device performance of Gr-VOLETs.
View Article and Find Full Text PDFHigh electrical conductivity of metal oxide thin films needs uniform surface coverage, which has been the issue for the thin films based on electrospun nanofibers (NFs) that have advantage over the sputtered/spin-coated films with respect to large surface area and mechanical flexibility. Herein, we investigated a reduction in the sheet resistance of electrospun indium tin oxide (ITO) NF films with improved surface coverage. We found that the surface coverage depends significantly on the electrospinnable polymer concentration in the precursor solutions, especially after post-hot-plate annealing following the infrared radiation furnace treatment.
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