Border Trap Extraction with Capacitance- Equivalent Thickness to Reflect the Quantum Mechanical Effect on Atomic Layer Deposition High-k/InGaAs on 300-mm Si Substrate.

This study presents a model to calculate the border trap density (N) of atomic layer deposition high-k onto InGaAs on a 300-mm (001) Si substrate. This model considers the quantum confinement effect and band nonparabolicity. Capacitance-equivalent thickness (CET) was used to reflect the distance of the charge centroid from the oxide-semiconductor interface.

Characterization of Al Incorporation into HfO Dielectric by Atomic Layer Deposition.

This study presents the characteristics of HfAlO films for a series of Al incorporation ratios into a HfO dielectric by atomic layer deposition on a Si substrate. A small amount of Al doping into the HfO film can stabilize the tetragonal phase of the HfO, which helps to achieve a higher dielectric constant () and lower leakage current density, as well as a higher breakdown voltage than HfO film on its own. Moreover, assimilation of AlO into HfO can reduce the hysteresis width and frequency dispersion.

Heterodimerization of glycosylated insulin-like growth factor-1 receptors and insulin receptors in cancer cells sensitive to anti-IGF1R antibody.

Background: Identification of predictive biomarkers is essential for the successful development of targeted therapy. Insulin-like growth factor 1 receptor (IGF1R) has been examined as a potential therapeutic target for various cancers. However, recent clinical trials showed that anti-IGF1R antibody and chemotherapy are not effective for treating lung cancer.