Surface Modification of Silicon Carbide Wafers Using Atmospheric Plasma Etching: Effects of Processing Parameters.

Silicon carbide wafer serves as an ideal substrate material for manufacturing semiconductor devices, holding immense potential for the future. However, its ultra-hardness and remarkable chemical inertness pose significant challenges for the surface processing of wafers, and a highly efficient and damage-free method is required to meet the processing requirements. In this study, atmospheric plasma processing was used to conduct point-residence experiments on silicon carbide wafers by varying process parameters such as Ar, CF, and O flow rate, as well as processing power and the distance between the plasma torch and the workpiece.

Experimental Study on Shear Rheological Polishing of Si Surface of 4H-SiC Wafer.

In this study, shear rheological polishing was used to polish the Si surface of six-inch 4H-SiC wafers to improve polishing efficiency. The surface roughness of the Si surface was the main evaluation index, and the material removal rate was the secondary evaluation index. An experiment was designed using the Taguchi method to analyze the effects of four critical parameters (abrasive particle size, abrasive particle concentration, polishing speed, and polishing pressure) on the Si surface polishing of SiC wafers.

Study of Atmospheric Pressure Plasma Temperature Based on Silicon Carbide Etching.

In order to further understand the excitation process of inductively coupled plasma (ICP) and improve the etching efficiency of silicon carbide (SiC), the effect of temperature and atmospheric pressure on plasma etching of silicon carbide was investigated. Based on the infrared temperature measurement method, the temperature of the plasma reaction region was measured. The single factor method was used to study the effect of the working gas flow rate and the RF power on the plasma region temperature.

Multidimensional Study on the Wear of High-Speed, High-Temperature, Heavy-Load Bearings.

The friction and wear performance of high-performance bearings directly affects the accuracy and maneuverability of weapons and equipment. In this study, high-speed, high-temperature, and heavy-load durability experiments of weapon bearings were carried out, and their wear properties (i.e.

Material Removal Characteristics of Spherical-Array-Focused Ultrasonic Abrasive Machining.

To improve the ultrasonic energy and realize far-field ultrasonic abrasive machining of complex surfaces, a spherical-array-focused ultrasonic abrasive machining system was established. By combining ultrasonic field simulation, detection and a single-factor experiment, the influences of the ultrasonic generator current, abrasive concentration, and particle size on the material removal properties and surface quality evolution of quartz glass were investigated. When the current was less than 0.

CMP Pad Conditioning Using the High-Pressure Micro-Jet Method.

In this study, in order to improve and restore the performance of the polishing pads and reduce the cost of chemical mechanical polishing, three types of material polishing pads, namely, polyurethane, damping cloth, and non-woven fabric, were selected for the experiment. Accordingly, each polishing pad was set up with diamond conditioner and high-pressure micro-jet (HPMJ) conditioning control experiments. Subsequently, the fluctuation ranges of the material removal rate on the three polishing pads were 2.

Research on Monocrystalline Silicon Micro-Nano Structures Irradiated by Femtosecond Laser.

Femtosecond (fs) laser processing has received great attention for preparing novel micro-nano structures and functional materials. However, the induction mechanism of the micro-nano structures induced by fs lasers still needs to be explored. In this work, the laser-induced periodic surface structure (LIPSS) of monocrystalline silicon (Si) under fs laser irradiation is investigated.

Investigation on the Basic Characteristics of Semi-Fixed Abrasive Grains Polishing Technique for Polishing Sapphire (α-AlO).

Single-crystal sapphire (α-AlO) is an important material and widely used in many advanced fields. The semi-fixed abrasive grain processing method based on solid-phase reaction theory is a prominent processing method for achieving ultra-precision damage-free surfaces. In order to develop the proposed method for polishing sapphire, the basic characteristics of the semi-fixed abrasive grains polishing tool for polishing sapphire were determined.

Effects of pH Values and HO Concentrations on the Chemical Enhanced Shear Dilatancy Polishing of Tungsten.

In order to obtain tungsten with great surface qualities and high polishing efficiency, a novel method of chemical enhanced shear dilatancy polishing (C-SDP) was proposed. The effects of pH values and HO concentrations on the polishing performance of tungsten C-SDP were studied. In addition, the corrosion behaviors of tungsten in solutions with different pH values and HO concentrations were analyzed by electrochemical experiments, and the valence states of elements on the tungsten surface were analyzed by XPS.

Effect of Wetting Characteristics of Polishing Fluid on the Quality of Water-Dissolution Polishing of KDP Crystals.

KDP crystals constitute the only laser-frequency conversion and electro-optical switches that can be used in laser systems for inertial confinement fusion. However, KDP crystals are difficult to produce because of their inherent softness, brittleness, water-solubility, and temperature sensitivity. The authors' group developed a water-dissolution polishing method in previous studies to obtain near-damage-free KDP surfaces.

Shear Thickening Polishing of Quartz Glass.

Quartz glass is a typical optical material. In this research, colloidal silica (SiO) and colloidal cerium oxide (CeO) are used as abrasive grains to polish quartz glass in the shear thickening polishing (STP) process. The STP method employs the shear-thickening mechanism of non-Newtonian power-law fluid to achieve high-efficiency and high-quality polishing.

The Mechanism of Layer Stacked Clamping (LSC) for Polishing Ultra-Thin Sapphire Wafer.

Double-sides polishing technology has the advantages of high flatness and parallelism, and high polishing efficiency. It is the preferred polishing method for the preparation of ultra-thin sapphire wafer. However, the clamping method is a fundamental problem which is currently difficult to solve.

Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer.

Silicon wafer with high surface quality is widely used as substrate materials in the fields of micromachines and microelectronics, so a high-efficiency and high-quality polishing method is urgently needed to meet its large demand. In this paper, a dielectrophoresis polishing (DEPP) method was proposed, which applied a non-uniform electric field to the polishing area to slow down the throw-out effect of centrifugal force, thereby achieving high-efficiency and high-quality polishing of silicon wafers. The principle of DEPP was described.

Orientation-Independent Yield Stress and Activation Volume of Dislocation Nucleation in LiTaO Single Crystal by Nanoindentation.

Relying on nanoindentation technology, we investigated the elastic-to-plastic transition via first pop-in event and estimated the corresponding shear stress for incipient plasticity, i.e., yielding in the three typical orientations, i.

Method development for simultaneous analyses of polycyclic aromatic hydrocarbons and their nitro-, oxy-, hydroxy- derivatives in sediments.

It is important to establish an available analytical method for polycyclic aromatic hydrocarbons (PAHs), nitrated PAHs (nitro-PAHs), oxygenated forms of PAHs (oxy-PAHs), and hydroxy-PAHs (OH-PAHs) in sediment samples due to the fact that they co-exist in various environmental mediates, particularly in sediment. In this study, an analytical method has been developed and validated for the quantification of PAHs, nitro-PAHs, oxy-PAHs, and OH-PAHs in sediment samples. The sediment samples were extracted by accelerated solvent extraction and cleaned up with SPE alumina-n combining with aminopropyl cartridges.