Enhancing the Resistive Memory Window through Band Gap Tuning in Solid Solution (CrV)O.

Memories based on the insulator-to-metal transition in correlated insulators are promising to overcome the limitations of alternative nonvolatile memory technologies. However, associated performances have been demonstrated so far only on narrow-gap compounds, such as (VCr)O, exhibiting a tight memory window. In the present study, V-substituted CrO compounds (CrV)O have been synthesized and widely investigated in thin films, single crystals, and polycrystalline powders, for the whole range of chemical composition (0 < < 1).

Impact of the terahertz and optical pump penetration depths on generated strain waves temporal profiles in a VO thin film.

Triggering new stable macroscopic orders in materials by ultrafast optical or terahertz pump pulses is a difficult challenge, complicated by the interplay between multiscale microscopic mechanisms, and macroscopic excitation profiles in samples. In particular, the differences between the two types of excitations are still unclear. In this article, we compare the optical response on acoustic timescale of a VO Paramagnetic Metallic (PM) thin film excited by a terahertz (THz) pump or an optical pump, at room temperature.

Universal electric-field-driven resistive transition in narrow-gap Mott insulators.

A striking universality in the electric-field-driven resistive switching is shown in three prototypical narrow-gap Mott systems. This model, based on key theoretical features of the Mott phenomenon, reproduces the general behavior of this resistive switching and demonstrates that it can be associated with a dynamically directed avalanche. This model predicts non-trivial accumulation and relaxation times that are verified experimentally.