We study the low-temperature (T = 4.7 K) emission dynamics of a thin film of methylammonium lead bromide (MAPbBr3), prepared via the anti-solvent method. Using intensity-dependent (over 5 decades) hyperspectral microscopy under quasi-resonant (532 nm) continuous wave excitation, we revealed spatial inhomogeneities in the thin film emission.
View Article and Find Full Text PDFWe report the first doping of crystalline methyl-ammonium lead bromide perovskite (MAPbBr) films with CdSe/CdZnS core/shell quantum dots (QDs), using a soft-chemistry approach that preserves their high quantum yield and other remarkable luminescence properties. Our approach produces MAPbBr films of around 100 nm thickness, doped at volume ratios between 0.01 and 1% with colloidal CdSe/CdZnS QDs whose organic ligands were exchanged with halide ions to allow for close contact between the QDs and the perovskite matrix.
View Article and Find Full Text PDFWe explore the effect of the shell thickness on the time response of CdS/CdSe/CdS spherical quantum wells (SQWs) nanoscintillators under X-ray excitation. We first compare the spectral and timing properties under low and intense optical excitation, which allows us to identify the complex temporal and spectral response of the highly excited species. We find that a defect-induced delayed luminescence appears at large sizes.
View Article and Find Full Text PDFWe report the synthesis and optical characterization of fully inorganic gradient-shell CdSe/CdZnS nanocrystals (NCs) with high luminescence quantum yield (QY, 50%), which were obtained by replacing native oleic-acid (OA) ligands with halide ions (Cland Br). Absorption, photoluminescence excitation (PLE) and photoluminescence (PL) spectra in solution were unaffected by the ligand-exchange procedure. The halide-capped NCs were stable in solution for several weeks without modification of their PL spectra; once deposited as unprotected thin films and exposed to air, however, they did show signs of aging which we attribute to increasing heterogeneity of (effective) NC size.
View Article and Find Full Text PDFWe report the successful encapsulation of colloidal quantum dots in an inorganic matrix by pulsed laser deposition. Our technique is nondestructive and thus permits the incorporation of CdSe/CdS core/shell colloidal quantum dots in an amorphous yttrium oxide matrix (Y2O3) under full preservation of the advantageous optical properties of the nanocrystals. We find that controlling the kinetic energy of the matrix precursors by means of the oxygen pressure in the deposition chamber facilitates the survival of the encapsulated species, whose well-conserved optical properties such as emission intensity, luminescence spectrum, fluorescence lifetime, and efficiency as single-photon emitters we document in detail.
View Article and Find Full Text PDFA huge effort is underway to develop semiconductor nanostructures as low-noise hosts for qubits. The main source of dephasing of an electron spin qubit in a GaAs-based system is the nuclear spin bath. A hole spin may circumvent the nuclear spin noise.
View Article and Find Full Text PDFWe explore the potential of CdSe/ZnS colloidal quantum dots (QDs) as probes for their immediate dielectric environment, based on the influence of the local refractive index on the fluorescence dynamics of these nanoemitters. We first compare ensembles of quantum dots in homogeneous solutions with single quantum dots dispersed on various dielectric substrates, which allows us to test the viability of a conceptual framework based on a hard-sphere region-of-influence and the Bruggeman effective-medium approach. We find that all our measurements can be integrated into a coherent description, provided that the conceptualized point-dipole emitter is positioned at a distance from the substrate that corresponds to the geometry of the QD.
View Article and Find Full Text PDFDeveloping a quantum photonics network requires a source of very-high-fidelity single photons. An outstanding challenge is to produce a transform-limited single-photon emitter to guarantee that single photons emitted far apart in the time domain are truly indistinguishable. This is particularly difficult in the solid-state as the complex environment is the source of noise over a wide bandwidth.
View Article and Find Full Text PDFWe present an unbiased and robust analysis method for power-law blinking statistics in the photoluminescence of single nanoemitters, allowing us to extract both the bright- and dark-state power-law exponents from the emitters' intensity autocorrelation functions. As opposed to the widely used threshold method, our technique therefore does not require discriminating the emission levels of bright and dark states in the experimental intensity timetraces. We rely on the simultaneous recording of 450 emission timetraces of single CdSe/CdS core/shell quantum dots at a frame rate of 250 Hz with single photon sensitivity.
View Article and Find Full Text PDFWe report high resolution coherent population trapping on a single hole spin in a semiconductor quantum dot. The absorption dip signifying the formation of a dark state exhibits an atomic physicslike dip width of just 10 MHz. We observe fluctuations in the absolute frequency of the absorption dip, evidence of very slow spin dephasing.
View Article and Find Full Text PDFOptically active quantum dots, for instance self-assembled InGaAs quantum dots, are potentially excellent single photon sources. The fidelity of the single photons is much improved using resonant rather than non-resonant excitation. With resonant excitation, the challenge is to distinguish between resonance fluorescence and scattered laser light.
View Article and Find Full Text PDFMidinfrared absorption can be locally measured using a detection combining an atomic force microscope and a pulsed excitation. This is illustrated for the midinfrared bulk GaAs phonon absorption and for the midinfrared absorption of thin SiO(2) microdisks. We show that the signal given by the cantilever oscillation amplitude of the atomic force microscope follows the spectral dependence of the bulk material absorption.
View Article and Find Full Text PDFWe show that we can measure the room temperature ultraweak absorption of a single buried semiconductor quantum dot. This is achieved by monitoring the deformation field induced by the absorption of midinfrared laser pulses and locally detected with an atomic force microscope tip. The absorption is spectrally and spatially resolved around lambda approximately 10 microm wavelength with 60 nm lateral resolution (lambda/150).
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