Purpose: Implant-retained facial prostheses are becoming increasingly sophisticated. We describe our experience with successful implant placement.
Methods: Retrospective case series.
Solid-state self-quenching processes of highly efficient Ir(III) phosphorescent emitters are investigated by the measurement of thin film photoluminescence quantum efficiency and transient lifetime as a function of doping concentration in a host matrix. The radiative decay rate constant is found to be independent from the average distance between dopant molecules (R), and the concentration-quenching rate constant is shown to be dependent on R(-6). The quenching dependence on R strongly suggests that luminescent concentration quenching in a phosphorescent Ir(III) complex:host film is controlled by dipole-dipole deactivating interactions as described by the Förster energy transfer model.
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