Reversible switching between p- and n-type conduction in the semiconductor Ag10Te4Br3.

Semiconductors are key materials in modern electronics and are widely used to build, for instance, transistors in integrated circuits as well as thermoelectric materials for energy conversion, and there is a tremendous interest in the development and improvement of novel materials and technologies to increase the performance of electronic devices and thermoelectrics. Tetramorphic Ag(10)Te(4)Br(3) is a semiconductor capable of switching its electrical properties by a simple change of temperature. The combination of high silver mobility, a small non-stoichiometry range and an internal redox process in the tellurium substructure causes a thermopower drop of 1,400 microV K(-1), in addition to a thermal diffusivity in the range of organic polymers.

Single-crystal growth and characterization of disilver(I) monofluorophosphate(V), Ag2PO3F: crystal structure, thermal behavior, vibrational spectroscopy, and solid-state 19F, 31P, and 109Ag MAS NMR spectroscopy.

Single crystals of disilver(I) monofluorophosphate(V), Ag2PO3F (1), were obtained by slow evaporation of a diluted aqueous Ag2PO3F solution. Compound 1 adopts a new structure type and crystallizes in the monoclinic space group C2/c with eight formula units and lattice parameters of a = 9.2456(8) A, b = 5.