Interface trap states in organic photodiodes.

Organic semiconductors are attractive for optical sensing applications due to the effortless processing on large active area of several cm(2), which is difficult to achieve with solid-state devices. However, compared to silicon photodiodes, sensitivity and dynamic behavior remain a major challenge with organic sensors. Here, we show that charge trapping phenomena deteriorate the bandwidth of organic photodiodes (OPDs) to a few Hz at low-light levels.