DC modeling and the source of flicker noise in passivated carbon nanotube transistors.

DC and intrinsic low-frequency noise properties of p-channel depletion-mode carbon nanotube field effect transistors (CNT-FETs) are investigated. To characterize the intrinsic noise properties, a thin atomic layer deposited (ALD) HfO(2) gate dielectric is used as a passivation layer to isolate CNT-FETs from environmental factors. The ALD HfO(2) gate dielectric in these high-performance top-gated devices is instrumental in attaining hysteresis-free current-voltage characteristics and minimizes low-frequency noise.