Inherited infertility: Mapping loci associated with impaired female reproduction.

Female infertility is a common and complex health problem affecting millions of women worldwide. While multiple factors can contribute to this condition, the underlying cause remains elusive in up to 15%-30% of affected individuals. In our large genome-wide association study (GWAS) of 22,849 women with infertility and 198,989 control individuals from the Finnish population cohort FinnGen, we unveil a landscape of genetic factors associated with the disorder.

Y chromosome sequencing data suggest dual paths of haplogroup N1a1 into Finland.

The paternally inherited Y chromosome is highly informative of genetic ancestry, therefore making it useful in studies of population history. In Finland, two Y-chromosomal haplogroups reveal the major substructure of the population: N1a1 enriched in the northeast and I1a in the southwest, suggested to reflect eastern and western ancestry contributions to the population. Yet, beyond these major Y-chromosomal lineages, the distribution of finer-scale Y-chromosomal variation has not been assessed in Finland.

Active synchronization and modulation of fiber lasers with a graphene electro-optic modulator.

We report the synchronization of two actively -switched fiber lasers operating at 1.5 μm and 2 μm with a shared broadband graphene electro-optic modulator. Two graphene monolayer sheets separated with a high- dielectric layer are configured to enable broadband light modulation.

Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor.

The quality of graphene in nanodevices has increased hugely thanks to the use of hexagonal boron nitride as a supporting layer. This paper studies to which extent hBN together with channel length scaling can be exploited in graphene field-effect transistors (GFETs) to get a competitive radio-frequency (RF) performance. Carrier mobility and saturation velocity were obtained from an ensemble Monte Carlo simulator that accounted for the relevant scattering mechanisms (intrinsic phonons, scattering with impurities and defects, etc).

Tunable Graphene-GaSe Dual Heterojunction Device.

A field-effect device based on dual graphene-GaSe heterojunctions is demonstrated. Monolayer graphene is used as electrodes on a GaSe channel to form two opposing Schottky diodes controllable by local top gates. The device exhibits strong rectification with tunable threshold voltage.

Tuning Localized Surface Plasmon Resonance in Scanning Near-Field Optical Microscopy Probes.

A reproducible route for tuning localized surface plasmon resonance in scattering type near-field optical microscopy probes is presented. The method is based on the production of a focused-ion-beam milled single groove near the apex of electrochemically etched gold tips. Electron energy-loss spectroscopy and scanning transmission electron microscopy are employed to obtain highly spatially and spectroscopically resolved maps of the milled probes, revealing localized surface plasmon resonance at visible and near-infrared wavelengths.

Investigation of second- and third-harmonic generation in few-layer gallium selenide by multiphoton microscopy.

Gallium selenide (GaSe) is a layered semiconductor and a well-known nonlinear optical crystal. The discovery of graphene has created a new vast research field focusing on two-dimensional materials. We report on the nonlinear optical properties of few-layer GaSe using multiphoton microscopy.

All-Graphene Three-Terminal-Junction Field-Effect Devices as Rectifiers and Inverters.

We present prominent tunable and switchable room-temperature rectification performed at 100 kHz ac input utilizing micrometer-scale three-terminal junction field-effect devices. Monolayer CVD graphene is used as both a channel and a gate electrode to achieve all-graphene thin-film structure. Instead of ballistic theory, we explain the rectification characteristics through an electric-field capacitive model based on self-gating in the high source-drain bias regime.

Exceptionally strong and robust millimeter-scale graphene-alumina composite membranes.

Graphene has attracted attention as a potential strengthening material and functional component in suspended membranes as utilized in micro and nanosystems. Development of a practical and scalable fabrication process is a necessary step to allow the exceptional material properties of graphene to be fully exploited in composite structures. Using standard and scalable microfabrication processes, we fabricated free-standing chemical vapor deposition monolayer graphene-reinforced Al2O3 composite membranes, 0.

Rapid large-area multiphoton microscopy for characterization of graphene.

Single- and few-layer graphene was studied with simultaneous third-harmonic and multiphoton-absorption-excited fluorescence microscopy using a compact 1.55 μm mode-locked fiber laser source. Strong third-harmonic generation (THG) and multiphoton-absorption-excited fluorescence (MAEF) signals were observed with high contrast over the signal from the substrate.

Highly tunable local gate controlled complementary graphene device performing as inverter and voltage controlled resistor.

Using single-layer CVD graphene, a complementary field effect transistor (FET) device is fabricated on the top of separated back-gates. The local back-gate control of the transistors, which operate with low bias at room temperature, enables highly tunable device characteristics due to separate control over electrostatic doping of the channels. Local back-gating allows control of the doping level independently of the supply voltage, which enables device operation with very low VDD.

Nonlinear behavior of three-terminal graphene junctions at room temperature.

We demonstrate nonlinear behavior in three-terminal T-branch graphene devices at room temperature. A rectified nonlinear output at the center branch is observed when the device is biased by a push-pull configuration. Nonlinearity is assumed to arise from a difference in charge transfer through the metal–graphene contact barrier between two contacts.

Transformation of self-assembled InAs/InP quantum dots into quantum rings without capping.

Transformation of self-assembled InAs quantum dots (QDs) on InP(100) into quantum rings (QRs) is studied. In contrast to the typical approach to III--V semiconductor QR growth, the QDs are not capped to form rings. Atomic force micrographs reveal a drastic change from InAs QDs into rings after a growth interruption in tertiarybutylphosphine ambient.