Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror.

We demonstrate the lateral optical confinement of GaN-based vertical-cavity surface-emitting lasers (GaN-VCSELs) with a cavity containing a curved mirror that is formed monolithically on a GaN wafer. The output wavelength of the devices is 441-455 nm. The threshold current is 40 mA (J = 141 kA/cm) under pulsed current injection (W = 100 ns; duty = 0.