Li iontronics in single-crystalline T-NbO thin films with vertical ionic transport channels.

The niobium oxide polymorph T-NbO has been extensively investigated in its bulk form especially for applications in fast-charging batteries and electrochemical (pseudo)capacitors. Its crystal structure, which has two-dimensional (2D) layers with very low steric hindrance, allows for fast Li-ion migration. However, since its discovery in 1941, the growth of single-crystalline thin films and its electronic applications have not yet been realized, probably due to its large orthorhombic unit cell along with the existence of many polymorphs.

Heterointerface Effect on Two-Step Nucleation Mechanism of Bi Particles.

The nucleation and crystallization of Bi particles on two matrices, crystalline bismuth sulfide (-BiS) and amorphized bismuth titanium oxide (-BiTiO), were studied by using in situ transmission electron microscopy (TEM) analysis. The atomic structures of the Bi particles were monitored by acquiring high-resolution TEM images in real time. The Bi particles were grown on -BiS and -BiTiO via a two-step nucleation mechanism; dense liquid clusters were clearly observed at the initial stage of nucleation, and the coalescence of clusters was frequently observed during the growth.

Single- or double-membrane-bound vesicles and P, Ca, and Fe-containing granules in Xanthomonas citri cultured on a solid medium.

The organelle-like structures of Xanthomonas citri, a bacterial pathogen that causes citrus canker, were investigated using an analytical transmission electron microscope. After high-pressure freezing, the bacteria were then freeze-substituted for imaging and element analysis. Miniscule electron-dense structures of varying shapes without a membrane enclosure were frequently observed near the cell poles in a 3-day culture.

Adatom Doping of Transition Metals in ReSe Nanosheets for Enhanced Electrocatalytic Hydrogen Evolution Reaction.

Two-dimensional Re dichalcogenide nanostructures are promising electrocatalysts for the hydrogen evolution reaction (HER). Herein, we report the adatom doping of various transition metals (TM = Mn, Fe, Co, Ni, and Cu) in ReSe nanosheets synthesized using a solvothermal reaction. As the atomic number of TM increases from Mn to Cu, the adatoms on Re sites become more favored over the substitution.

An unexpected surfactant role of immiscible nitrogen in the structural development of silver nanoparticles: an experimental and numerical investigation.

Artificially designing the crystal orientation and facets of noble metal nanoparticles is important to realize unique chemical and physical features that are very different from those of noble metals in bulk geometries. However, relative to their counterparts synthesized in wet-chemical processes, vapor-depositing noble metal nanoparticles with the desired crystallographic features while avoiding any notable impurities is quite challenging because this task requires breaking away from the thermodynamically favorable geometry of nanoparticles. We used plasma-generated N atoms as a surface-active agent, a so-called surfactant, to control the structural development of Ag nanoparticles supported on a chemically heterogeneous ZnO substrate.

Introduction to the standard reference data of electron energy loss spectra and their database: eel.geri.re.kr.

Electron energy loss spectroscopy (EELS) is an analytical technique that can provide the structural, physical and chemical information of materials. The EELS spectra can be obtained by combining with TEM at sub-nanometer spatial resolution. However, EELS spectral information can't be obtained easily because in order to interpret EELS spectra, we need to refer to and/or compare many reference data with each other.

Author Correction: Lattice strain-enhanced exsolution of nanoparticles in thin films.

The original version of this Article contained an error in the Data Availability section, which incorrectly read 'The data that support the findings of this study are available from the corresponding authors upon request.' The correct version replaces this sentence with 'The research data underpinning this publication can be accessed at https://doi.org/10.

Lattice strain-enhanced exsolution of nanoparticles in thin films.

Nanoparticles formed on oxide surfaces are of key importance in many fields such as catalysis and renewable energy. Here, we control B-site exsolution via lattice strain to achieve a high degree of exsolution of nanoparticles in perovskite thin films: more than 1100 particles μm with a particle size as small as ~5 nm can be achieved via strain control. Compressive-strained films show a larger number of exsolved particles as compared with tensile-strained films.

Origins of High Performance and Degradation in the Mixed Perovskite Solar Cells.

The origins of the high device performance and degradation in the air are the greatest issues for commercialization of perovskite solar cells. Here this study investigates the possible origins of the mixed perovskite cells by monitoring defect states and compositional changes of the perovskite layer over the time. The results of deep-level transient spectroscopy analysis reveal that a newly identified defect formed by Br atoms exists at deep levels of the mixed perovskite film, and its defect state shifts when the film is aged in the air.

Switchable ferroelectric photovoltaic effects in epitaxial h-RFeO thin films.

Ferroelectric photovoltaics (FPVs) have drawn much attention owing to their high stability, environmental safety, and anomalously high photovoltages, coupled with reversibly switchable photovoltaic responses. However, FPVs suffer from extremely low photocurrents, which is primarily due to their wide band gaps. Here, we present a new class of FPVs by demonstrating switchable ferroelectric photovoltaic effects and narrow band-gap properties using hexagonal ferrite (h-RFeO3) thin films, where R denotes rare-earth ions.

Single-Crystalline Nanobelts Composed of Transition Metal Ditellurides.

Following the celebrated discovery of graphene, considerable attention has been directed toward the rich spectrum of properties offered by van der Waals crystals. However, studies have been largely limited to their 2D properties due to lack of 1D structures. Here, the growth of high-yield, single-crystalline 1D nanobelts composed of transition metal ditellurides at low temperatures (T ≤ 500 °C) and in short reaction times (t ≤ 10 min) via the use of tellurium-rich eutectic metal alloys is reported.

Tunable polaron-induced coloration of tungsten oxide via a multi-step control of the physicochemical property for the detection of gaseous F.

The tunable polaron effect of amorphous tungsten oxide on FTO substrates has been used to detect fluorine in the gas phase via photochemical and gasochromic reactions. By combining photochemical (UV exposure under an H2 atomsphere) and gasochromic (XeF2 exposure) reactions, the detection of gaseous fluorine using amorphous tungsten oxide is described. The effective hydrogenation of WO3 was achieved using UV/H2 exposure to prepare hydrogenated tungsten oxide (H-WO3-x) upon activating the strong polaron-coupling to infrared (IR) light to decrease IR transmission from 70 to 20% at 1000 nm wavelength.

Evaluation of bone healing using rhBMP-2 soaked hydroxyapatite in ridge augmentation: a prospective observational study.

Background: The goal of this study is to evaluate complication and effectiveness of alveolar ridge augmentations using a hydroxyapatite-based alloplastic bony substitute with rhBMP-2.

Methods: A total of 10 patients (4 males, 6 females; 58.5 ± 8.

Enhanced Switchable Ferroelectric Photovoltaic Effects in Hexagonal Ferrite Thin Films via Strain Engineering.

Ferroelectric photovoltaics (FPVs) are being extensively investigated by virtue of switchable photovoltaic responses and anomalously high photovoltages of ∼10 V. However, FPVs suffer from extremely low photocurrents due to their wide band gaps (E). Here, we present a promising FPV based on hexagonal YbFeO (h-YbFO) thin-film heterostructure by exploiting its narrow E.

Wafer-Scale Integration of Highly Uniform and Scalable MoS Transistors.

Molybdenum disulfide with atomic-scale flatness has application potential in high-speed and low-power logic devices owing to its scalability and intrinsic high mobility. However, to realize viable technologies based on two-dimensional materials, techniques that enable their large-area growth with high quality and uniformity on wafer cale is a prerequisite. Here, we provide a route toward highly uniform growth of a wafer-scale, four-layered MoS film on a 2 in.

Forming-less and Non-Volatile Resistive Switching in WO by Oxygen Vacancy Control at Interfaces.

Resistive switching devices are recognized as candidates for next-generation memory devices in that they can replace conventional memory devices. In these devices, a WO film deposited by RF magnetron sputtering with a significant number of oxygen vacancies exhibits a resistive switching property and does not involve the use of a forming process. The resistive switching mechanism involves the hopping of electrons through the sub-band states of the oxygen vacancies in E-field-driven electromigration.

Direct Observation of Inherent Atomic-Scale Defect Disorders responsible for High-Performance Ti Hf NiSn Sb Half-Heusler Thermoelectric Alloys.

Structural defects often dominate the electronic- and thermal-transport properties of thermoelectric (TE) materials and are thus a central ingredient for improving their performance. However, understanding the relationship between TE performance and the disordered atomic defects that are generally inherent in nanostructured alloys remains a challenge. Herein, the use of scanning transmission electron microscopy to visualize atomic defects directly is described and disordered atomic-scale defects are demonstrated to be responsible for the enhancement of TE performance in nanostructured Ti Hf NiSn Sb half-Heusler alloys.

Creation of a Short-Range Ordered Two-Dimensional Electron Gas Channel in AlO/InO Interfaces.

The tuning of electrical properties in oxides via surface and interfacial two-dimensional electron gas (2DEG) channels is of great interest, as they reveal the extraordinary transition from insulating or semiconducting characteristics to metallic conduction or superconductivity enabled by the ballistic transport of spatially confined electrons. However, realizing the practical aspects of this exotic phenomenon toward short-range ordered and air-stable 2DEG channels remains a great challenge. At the heterointerface formed after deposition of an AlO layer on a nanocrystalline InO layer, a dramatic improvement in carrier conduction equivalent to metallic conduction is obtained.

Effect of Nb Doping on Chemical Sensing Performance of Two-Dimensional Layered MoSe.

Here, we report that Nb doping of two-dimensional (2D) MoSe layered nanomaterials is a promising approach to improve their gas sensing performance. In this study, Nb atoms were incorporated into a 2D MoSe host matrix, and the Nb doping concentration could be precisely controlled by varying the number of NbO deposition cycles in the plasma enhanced atomic layer deposition process. At relatively low Nb dopant concentrations, MoSe showed enhanced device durability as well as NO gas response, attributed to its small grains and stabilized grain boundaries.

In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interface.

The interface-type resistive switching devices exhibiting bipolar and multi-level resistive switching have been considered as the key component for neuromorphic device applications. To directly observe the microscopic details of underlying electrochemical redox reactions occuring at a metal/oxide interface, we implemented in situ resistive switching of TiN/PrCaMnO (PCMO)/Pt junction devices in a transmission electron microscope (TEM). The in situ TEM observations directly show that an intermediate reaction layer (TiON), growing and shrinking in the thickness range of a few nanometers at the TiN/PCMO interface in response to the applied voltage, mainly determines the device resistance by limiting the transport of charge carriers via the Poole-Frenkel conduction mechanism.

Alloyed 2D Metal-Semiconductor Heterojunctions: Origin of Interface States Reduction and Schottky Barrier Lowering.

The long-term stability and superior device reliability through the use of delicately designed metal contacts with two-dimensional (2D) atomic-scale semiconductors are considered one of the critical issues related to practical 2D-based electronic components. Here, we investigate the origin of the improved contact properties of alloyed 2D metal-semiconductor heterojunctions. 2D WSe2-based transistors with mixed transition layers containing van der Waals (M-vdW, NbSe2/WxNb1-xSe2/WSe2) junctions realize atomically sharp interfaces, exhibiting long hot-carrier lifetimes of approximately 75,296 s (78 times longer than that of metal-semiconductor, Pd/WSe2 junctions).

Formation of Pt-Zn Alloy Nanoparticles by Electron-Beam Irradiation of Wurtzite ZnO in the TEM.

As is well documented, platinum nanoparticles, promising for catalysts for fuel cells, exhibit better catalytic activities, when alloyed with Zn. Pre-existing syntheses of Pt-Zn alloy catalysts are composed of a number of complex steps. In this study, we have demonstrated that nanoparticles of Pt-Zn alloys are simply generated by electron-beam irradiation in a transmission electron microscope of a wurtzite ZnO single-crystal specimen.

Alloyed 2D Metal-Semiconductor Atomic Layer Junctions.

Heterostructures of compositionally and electronically variant two-dimensional (2D) atomic layers are viable building blocks for ultrathin optoelectronic devices. We show that the composition of interfacial transition region between semiconducting WSe2 atomic layer channels and metallic NbSe2 contact layers can be engineered through interfacial doping with Nb atoms. WxNb1-xSe2 interfacial regions considerably lower the potential barrier height of the junction, significantly improving the performance of the corresponding WSe2-based field-effect transistor devices.

Photochemical Hydrogen Doping Induced Embedded Two-Dimensional Metallic Channel Formation in InGaZnO at Room Temperature.

The photochemical tunability of the charge-transport mechanism in metal-oxide semiconductors is of great interest since it may offer a facile but effective semiconductor-to-metal transition, which results from photochemically modified electronic structures for various oxide-based device applications. This might provide a feasible hydrogen (H)-radical doping to realize the effectively H-doped metal oxides, which has not been achieved by thermal and ion-implantation technique in a reliable and controllable way. In this study, we report a photochemical conversion of InGaZnO (IGZO) semiconductor to a transparent conductor via hydrogen doping to the local nanocrystallites formed at the IGZO/glass interface at room temperature.

Effect of Ti diffusion on the microstructure of Ge2Sb2Te5 in phase-change memory cell.

The dependence of the microstructure of Ge2Sb2Te5 (GST) on Ti diffusion into GST by annealing in GST/Ti/TiN phase-change random access memory stack was studied by various transmission electron microscopy (TEM) techniques. The microstructure and crystal structure of GST were identified with high-resolution TEM (HRTEM) and image simulation technique, and the Ti diffusion into GST was revealed by scanning transmission electron microscope-energy-dispersive X-ray spectroscopy analysis. It was observed that Ti atoms of Ti/TiN thin layers were incorporated into GST cell through several thermal annealing steps and they could retard the phase transition from face-centered cubic (FCC) phase into hexagonal close-packed (HCP) phase partially and restrain the increase in grain size.