Interferometric Near-field Fano Spectroscopy of Single Halide Perovskite Nanoparticles.

Semiconducting halide perovskite nanoparticles support Mie-type resonances that confine light on the nanoscale in localized modes with well-defined spatial field profiles yet unknown near-field dynamics. We introduce an interferometric scattering-type near-field microscopy technique to probe the local electric field dynamics at the surface of a single MAPbI nanoparticle. The amplitude and phase of the coherent light scattering from such modes are probed in a broad spectral range and with high spatial resolution.

Room-temperature ferromagnetic MnGa nanoparticles in dilute magnetic semiconductor (Ga, Mn)As thin film: preparation and characterization.

The GaAs based diluted magnetic semiconductor, (Ga, Mn)As, with the unique advantage of manipulating the spin and charge was widely investigated in the scientific community and considered as a potential material for the spintronic devices. However, its Curie temperature (), which is limited to around 200 K, hinders the research progress of diluted magnetic semiconductors for potential device applications. Herein, we propose an approach to prepare the MnGa nanoparticles embedded in (Ga, Mn)As matrix using the magnetron sputtering deposition of Mn on GaAs surface, followed by the nano-second pulsed laser annealing (PLA), which gives aabove 400 K.

Formation of a vertical SnSe/SnSe p-n heterojunction by NH plasma-induced phase transformation.

Layered van der Waals crystals exhibit unique properties making them attractive for applications in nanoelectronics, optoelectronics, and sensing. The integration of two-dimensional materials with complementary metal-oxide-semiconductor (CMOS) technology requires controllable n- and p-type doping. In this work, we demonstrate the fabrication of vertical p-n heterojunctions made of p-type tin monoselenide (SnSe) and n-type tin diselenide (SnSe).

Self-Driven Broadband Photodetectors Based on MoSe/FePS van der Waals n-p Type-II Heterostructures.

Two-dimensional (2D) van der Waals materials with broadband optical absorption are promising candidates for next-generation UV-vis-NIR photodetectors. FePS, one of the emerging antiferromagnetic van der Waals materials with a wide bandgap and p-type conductivity, has been reported as an excellent candidate for UV optoelectronics. However, a high sensitivity photodetector with a self-driven mode based on FePS has not yet been realized.

Two-dimensional magneto-photoconductivity in non-van der Waals manganese selenide.

Deficient intrinsic species and suppressed Curie temperatures (T) in two-dimensional (2D) magnets are major barriers for future spintronic applications. As an alternative, delaminating non-van der Waals (vdW) magnets can offset these shortcomings and involve robust bandgaps to explore 2D magneto-photoconductivity at ambient temperature. Herein, non-vdW α-MnSe is first delaminated as quasi-2D nanosheets for the study of emerging semiconductor, ferromagnetism and magneto-photoconductivity behaviors.

Chlorine doping of MoSe flakes by ion implantation.

The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their optoelectronic properties. Specifically, controllable doping is essential. For conventional bulk semiconductors, ion implantation is the most developed method offering stable and tunable doping.

Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing.

Controlled doping with an effective carrier concentration higher than 10 cm is a key challenge for the full integration of Ge into silicon-based technology. Such a highly doped layer of both p- and n type is needed to provide ohmic contacts with low specific resistance. We have studied the effect of ion implantation parameters i.