Depositing ALD-oxides on MLD-metalcones: enhancing initial growth through O plasma densification.

Flexible devices are experiencing a steady increase in popularity, which brings the need of suitable protective/functional coatings for these applications. On the one hand, Atomic Layer Deposition (ALD) produces thin films with great purity, few pinholes and good conformality, but flexibility is rather limited. On the other hand, Molecular Layer Deposition (MLD) can produce partially/fully organic coatings with good flexibility, but stability concerns limit their applications.

UV photonic integrated circuits for far-field structured illumination autofluorescence microscopy.

Ultra-violet (UV) light has still a limited scope in optical microscopy despite its potential advantages over visible light in terms of optical resolution and of interaction with a wide variety of biological molecules. The main challenge is to control in a robust, compact and cost-effective way UV light beams at the level of a single optical spatial mode and concomitantly to minimize the light propagation loss. To tackle this challenge, we present here photonic integrated circuits made of aluminum oxide thin layers that are compatible with both UV light and high-volume manufacturing.

Converting molecular layer deposited alucone films into AlO/alucone hybrid multilayers by plasma densification.

Alucones are one of the best-known films in the Molecular Layer Deposition (MLD) field. In this work, we prove that alucone/Al2O3 nanolaminate synthesis can be successfully performed by alternating alucone MLD growth with static O2 plasma exposures. Upon plasma treatment, only the top part of the alucone is densified into Al2O3, while the rest of the film remains relatively unaltered.

Mitigation of photon background in nanoplasmonic all-on-chip Raman sensors.

In the quest for a more compact and cheaper Raman sensor, photonic integration and plasmonic enhancement are central. Nanoplasmonic slot waveguides exhibit the benefits of SERS substrates while being compatible with photonic integration and mass-scale (CMOS) fabrication. A difficulty in pursuing further integration of the Raman sensor with lasers, spectral filters, spectrometers and interconnecting waveguides lies in the presence of a photon background generated by the excitation laser field in any dielectric waveguide constituting those elements.