Expanding the Spectral Responsivity of Photodetectors via the Integration of CdSe/ZnS Quantum Dots and MEH-PPV Polymer Composite.

This study investigates the energy transfer mechanism between the organic polymer poly(2-methoxy-5(2'-ethyl)heroxyphenylenevinylene) (MEH-PPV) and CdSe/ZnS core-shell quantum dots (CdSe/ZnS CSQDs). Additionally, a hybrid ZnO-based photodetector (PD) is fabricated using the composite of MEH-PPV and CdSe/ZnS CSQDs, aiming to gain deeper insights. The combination of MEH-PPV and CdSe/ZnS CSQDs facilitates a broad spectral response in PDs, spanning from the ultraviolet (UV) to the visible range.

Oil-gated isoporous membrane with micro-apertures for controllable pressure-induced passive flow regulator.

The pressure-driven liquid flow controller is one of the key components in diverse applications including microfluidic systems, biomedical drug injection devices, and pressurized water supply systems. Electric feedback loop based flow controllers are fine-tunable but expensive and complex. The conventional safety valves based on spring force are simple and low cost, but their diverse application is limited due to their fixed pressure range, size, and shape.

Investigation of efficient photoconduction and enhanced luminescence characteristics of Ce-doped ZnO nanophosphors for UV sensors.

This study involves the single-step, mass-scale productive synthesis, photoconduction, and luminescence characteristics of pure and cerium rare-earth-ion-doped ZnO (CZO) nanophosphors with different Ce concentrations (Ce: 0, 2, 4, 6, and 8 wt.%) synthesized using the solid-state reaction method. The synthesized nanophosphors were characterized for their structural, morphological, optical, and photoconductivity (PC) properties using X-ray diffraction (XRD), field-effect scanning electron microscopy (FE-SEM), energy dispersive spectroscopy, Fourier-transform infrared (FT-IR), photoluminescence (PL), and PC measurements.

Photoluminescence Properties of CdSe/ZnS Quantum Dot Donor-Acceptor via Plasmon Coupling of Metal Nanostructures and Application on Photovoltaic Devices.

Hybrid nanostructures composed of quantum dots (QDs) and metal nanoparticles (MNS) have gained immense research interest because of their unique optical properties. In optoelectronic applications, quenching and enhancement in QD photoluminescence (PL) are critical parameters. Herein, gold nanoparticles coating a silica layer decorated with quantum dots (AuNPs@SiO@QDs) are prepared with diverse SiO thickness and QD diameter for investigating the exciton-plasmon interaction.

Cu(In,Ga)Se Solar Cells Integrated with Subwavelength Structured Cover Glass Fabricated by One-Step Self-Masked Etching.

We report an anti-reflective cover glass for Cu(In,Ga)Se (CIGS) thin film solar cells. Subwavelength structures (SWSs) were fabricated on top of a cover glass using one-step self-masked etching. The etching method resulted in dense whiskers with high aspect ratio.

Luminescent down-shifting CsPbBr perovskite nanocrystals for flexible Cu(In,Ga)Se solar cells.

To overcome the parasitic absorption of ultraviolet (UV) light in the transparent conductive oxide (TCO) layer of flexible Cu(In,Ga)Se2 (CIGS) thin film solar cells, a CsPbBr3 perovskite nanocrystal based luminescent down-shifting (LDS) layer was integrated on CIGS solar cells fabricated on a stainless steel foil. The CsPbBr3 perovskite nanocrystal absorbs solar irradiation at wavelengths shorter than 520 nm and emits photons at a wavelength of 532 nm. These down-shifted photons pass the TCO layer without parasitic absorption and are absorbed in the CIGS absorber layer where they generate photocurrent.

Improved Hydrogen Sensing Performance of AlGaN/GaN Based Gas Sensors with Controlled Surface Nanostructures of Platinum Nanoparticulate Films.

A simple and convenient method for the formation of Pt nanoparticulate films as a sensing material by controlling deposition rates is demonstrated to realize AlGaN/GaN high electron mobility transistor-based high-sensitivity hydrogen gas sensors. The Pt nanoparticulate films produced at a low deposition rate (Sample 1: 0.3 Å/s) exhibit a smooth surface and uniformly sized Pt grains, while the films produced at a high deposition rate (Sample 2: 1.

New insights towards strikingly improved room temperature ethanol sensing properties of p-type Ce-doped SnO sensors.

In this article, room temperature ethanol sensing behavior of p-type Ce doped SnO nanostructures are investigated successfully. Interestingly, it is examined that the abnormal n to p-type transition behavior is caused by Ce doping in SnO lattice. In p-type Ce doped SnO, Ce ion substituting the Sn is in favor of generating excess holes as oxygen vacancies, which is associated with the improved sensing performance.

Ultrawide Spectral Response of CIGS Solar Cells Integrated with Luminescent Down-Shifting Quantum Dots.

Conventional Cu(In,Ga)Se (CIGS) solar cells exhibit poor spectral response due to parasitic light absorption in the window and buffer layers at the short wavelength range between 300 and 520 nm. In this study, the CdSe/CdZnS core/shell quantum dots (QDs) acting as a luminescent down-shifting (LDS) layer were inserted between the MgF antireflection coating and the window layer of the CIGS solar cell to improve light harvesting in the short wavelength range. The LDS layer absorbs photons in the short wavelength range and re-emits photons in the 609 nm range, which are transmitted through the window and buffer layer and absorbed in the CIGS layer.

Plasmon Field Effect Transistor for Plasmon to Electric Conversion and Amplification.

Direct coupling of electronic excitations of optical energy via plasmon resonances opens the door to improving gain and selectivity in various optoelectronic applications. We report a new device structure and working mechanisms for plasmon resonance energy detection and electric conversion based on a thin film transistor device with a metal nanostructure incorporated in it. This plasmon field effect transistor collects the plasmonically induced hot electrons from the physically isolated metal nanostructures.

Transparent conductor-embedding nanocones for selective emitters: optical and electrical improvements of Si solar cells.

Periodical nanocone-arrays were employed in an emitter region for high efficient Si solar cells. Conventional wet-etching process was performed to form the nanocone-arrays for a large area, which spontaneously provides the graded doping features for a selective emitter. This enables to lower the electrical contact resistance and enhances the carrier collection due to the high electric field distribution through a nanocone.

Incident light adjustable solar cell by periodic nanolens architecture.

Could nanostructures act as lenses to focus incident light for efficient utilization of photovoltaics? Is it possible, in order to avoid serious recombination loss, to realize periodic nanostructures in solar cells without direct etching in a light absorbing semiconductor? Here we propose and demonstrate a promising architecture to shape nanolenses on a planar semiconductor. Optically transparent and electrically conductive nanolenses simultaneously provide the optical benefit of modulating the incident light and the electrical advantage of supporting carrier transportation. A transparent indium-tin-oxide (ITO) nanolens was designed to focus the incident light-spectrum in focal lengths overlapping to a strong electric field region for high carrier collection efficiency.

Doping-free fabrication of silicon thin films for schottky solar cell.

Thin film Schottky solar cells were fabricated without doping processes, which may provide an alternative approach to the conventional thin film solar cells in the n-i-p configuration. A thin Co layer was coated on a substrate, which worked as a back contact metal and then Si film was grown above it. Deposition condition may modulate the Si film structure to be a fully amorphous Si (a-Si) or a mixing of microcrystalline Si (mc-Si) and a-Si.

Synthesis and characterization of lead selenide nanocrystal quantum dots and wires.

Lead chalcogenide nanocrystalline materials offer possibilities of improving the efficiency of various optoelectric/thermoelectric applications, especially in solar cells, by generating more carriers with incoming photons, or by extending the bandgap toward the infra-red region. In this work, we suggest the synthetic approach of creating extended PbSe structures which shows better performances when incorporated into an electric device. Firstly, we synthesized monodisperse cubic-structured single-crystalline lead selenide nanocrystal quantum dots using lead acetate and oleic acid in non-coordinating solvent without additional surfactants.

Solution-processed germanium nanowire-positioned Schottky solar cells.

Germanium nanowire (GeNW)-positioned Schottky solar cell was fabricated by a solution process. A GeNW-containing solution was spread out onto asymmetric metal electrodes to produce a rectifying current flow. Under one-sun illumination, the GeNW-positioned Schottky solar cell yields an open-circuit voltage of 177 mV and a short-circuit current of 19.

Functional microscopy tip fabrication by an electric conductive nanowire.

The functional microscopy tip was fabricated by an electric conductive nanowire (NW). Single crystalline nickel silicide (NiSi) NW grown by plasma-enhanced chemical vapor deposition has an excellent electrical conductivity. On behalf of the advantages in tiny size and conductivity of NiSi NW, it was utilized as a nanoscale probe.

ZnO nanowire-embedded Schottky diode for effective UV detection by the barrier reduction effect.

A zinc oxide nanowire (ZnO NW)-embedded Schottky diode was fabricated for UV detection. Two types of devices were prepared. The ZnO NW was positioned onto asymmetric metal electrodes (Al and Pt) for a Schottky device or symmetric metal electrodes (Al and Al) for an ohmic device, respectively.

Highly sensitive carbon nanotube-embedding gas sensors operating at atmospheric pressure.

Highly sensitive palladium (Pd) decorated carbon nanotube (CNT) embedding gas sensors working at atmospheric pressure were fabricated. Two types of gas sensors of bare CNTs and Pd nanoparticle decorated CNTs were synthesized by dielectrophoresis. The CNT-containing solution was dropped onto the patterned-platinum electrodes with ac bias.

A nickel silicide nanowire microscopy tip obtains nanoscale information.

An electric conductive Ni silicide nanowire (NiSi NW) embedding electric force microscopy (EFM) tip was fabricated by the dielectrophoretic method and was used to obtain electric information. Due to the geometric and electric excellence, the NiSi NW provides advantages in imaging and fabrication of the microscopy tip. A lead zirconate titanate (PZT) ferroelectric thin film was positively and negatively polarized, and the polarities were obtained by probing of the NiSi NW EFM tip to give distinctive charging information of the PZT film.