Water vapor and hydrogen gas diffusion barrier characteristics of AlO-alucone multi-layer structures for flexible OLED display applications.

Organic light emitting diodes (OLEDs) and amorphous oxide semiconductors (AOSs), which are very important technologies in high performance flexible displays, have issues related to degradation due to diffusion of water and hydrogen, respectively. To solve these issues, gas diffusion barrier properties were evaluated with aluminum oxide deposited by atomic layer deposition (ALD) and alucone deposited by molecular layer deposition (MLD) using trimethylaluminum (TMA) as a metal precursor and HO and hydroquinone (HQ) as co-reactants, respectively. The water vapor transmission rate (WVTR) and hydrogen gas permeability (HGP) were measured for the fabricated films electrical calcium tests and vacuum time-lag, respectively.

Atomic-Layer-Deposited SiO/SnO Nanolaminate Structure for Moisture and Hydrogen Gas Diffusion Barriers.

High-density SnO and SiO thin films were deposited via atomic layer deposition (ALD) at low temperatures (100 °C) using tetrakis(dimethylamino)tin(IV) (TDMASn) and di-isopropylaminosilane (DIPAS) as precursors and hydrogen peroxide (HO) and O plasma as reactants, respectively. The thin-film encapsulation (TFE) properties of SnO and SiO were demonstrated with thickness dependence measurements of the water vapor transmission rate (WVTR) evaluated at 50 °C and 90% relative humidity, and different TFE performance tendencies were observed between thermal and plasma ALD SnO. The film density, crystallinity, and pinholes formed in the SnO film appeared to be closely related to the diffusion barrier properties of the film.

Organic/Inorganic Hybrid Buffer in InGaZnO Transistors under Repetitive Bending Stress for High Electrical and Mechanical Stability.

We investigated the influence of the multilayered hybrid buffer consisting of AlO/PA (polyacrylic) organic layer/AlO on the electrical and mechanical properties of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The multilayered organic/inorganic hybrid buffer has multiple beneficial effects on the flexible TFTs under repetitive bending stress. First, compared to the PA or AlO single-layered buffer, the multilayered hybrid buffer showed an improved WVTR value of 1.

Electron Beam-Induced Sterility and Inhibition of Ovarian Development in the Sakhalin Pine Longicorn, Monochamus saltuarius (Coleoptera: Cerambycidae).

The Sakhalin pine longicorn, Monochamus saltuarius (Gebler; Coleoptera: Cerambycidae), is an insect vector of the pine wilt nematode (PWN), Bursaphelenchus xylophilus (Steiner et Buhrer) Nickle, and is widely distributed in central Korea. M. saltuarius is a forest pest that seriously damages Pinus densiflora (Siebold et Zucc, Pinales: Pinaceae) and Pinus koraiensis (Siebold & Zucc, Pinales: Pinaceae) forests.

Performance and Stability Enhancement of In-Sn-Zn-O TFTs Using SiO Gate Dielectrics Grown by Low Temperature Atomic Layer Deposition.

Silicon dioxide (SiO) films were synthesized by plasma-enhanced atomic layer deposition (PEALD) using BTBAS [bis(tertiarybutylamino) silane] as the precursor and O plasma as the reactant, at a temperature range from 50 to 200 °C. While dielectric constant values larger than 3.7 are obtained at all deposition temperatures, the leakage current levels are drastically reduced to below 10 A at temperatures above 150 °C, which are similar to those obtained in thermally oxidized and PECVD grown SiO.