Schottky barrier memory based on heterojunction bandgap engineering for high-density and low-power retention.

Dynamic random-access memory (DRAM) has been scaled down to meet high-density, high-speed, and low-power memory requirements. However, conventional DRAM has limitations in achieving memory reliability, especially sufficient capacitance to distinguish memory states. While there have been attempts to enhance capacitor technology, these solutions increase manufacturing cost and complexity.

Low-energy and tunable LIF neuron using SiGe bandgap-engineered resistive switching transistor.

We have proposed leaky integrate-and-fire (LIF) neuron having low-energy consumption and tunable functionality without external circuit components. Our LIF neuron has a simple configuration consisting of only three components: one bandgap-engineered resistive switching transistor (BE-RST), one capacitor, and one resistor. Here, the crucial point is that BE-RST with a silicon-germanium heterojunction possesses an amplified hysteric current switching with a low latch-up voltage due to improved hole storage capability and impact ionization coefficient.

Highly biomimetic spiking neuron using SiGe heterojunction bipolar transistors for energy-efficient neuromorphic systems.

We demonstrate a highly biomimetic spiking neuron capable of fast and energy-efficient neuronal oscillation dynamics. Our simple neuron circuit is constructed using silicon-germanium heterojunction based bipolar transistors (HBTs) with nanowire structure. The HBT has a hysteresis window with steep switching characteristics and high current margin in the low voltage range, which enables a high spiking frequency (~ 245 kHz) with low energy consumption (≤ 1.

Enhanced near-infrared photodetection via whispering gallery modes in the wave-shaped sidewall silicon nanopillar arrays.

We demonstrate a near-infrared (NIR) photodiode (PD) by using a wave-shaped sidewall silicon nanopillars (WS-SiNPs) structure. The designed WS sidewall nanostructure increases the horizontal component of incident light and induces multiple whispering-gallery modes with low-quality factor, which increases the light absorption path. Thus, the WS-SiNP PD shows improved spectral responsivity and external quantum efficiency over straight sidewall silicon nanopillars and planar PDs in the NIR region.

Computer Vision-Based Path Planning for Robot Arms in Three-Dimensional Workspaces Using Q-Learning and Neural Networks.

Computer vision-based path planning can play a crucial role in numerous technologically driven smart applications. Although various path planning methods have been proposed, limitations, such as unreliable three-dimensional (3D) localization of objects in a workspace, time-consuming computational processes, and limited two-dimensional workspaces, remain. Studies to address these problems have achieved some success, but many of these problems persist.

Valsalva retinopathy following esophagogastroduodenoscopy under propofol sedation: a case report.

We report a case of Valsalva retinopathy associated with esophagogastroduodenoscopy (EGD) under propofol sedation. A 43-year-old woman who had no previous history of systemic or ocular disease presented with a complaint of decreased vision in her left eye, which developed one day after EGD under propofol sedation. According to the referring physician, the patient had experienced multiple sustained Valsalva maneuvers during EGD.