Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect.

Group-III nitrides have transformed solid-state lighting and are strategically positioned to revolutionize high-power and high-frequency electronics. To drive this development forward, a deep understanding of fundamental material properties, such as charge carrier behavior, is essential and can also unveil new and unforeseen applications. This underscores the necessity for novel characterization tools to study group-III nitride materials and devices.

Super-High-Frequency Low-Loss Sezawa Mode SAW Devices in a GaN/SiC Platform.

This paper presents a comprehensive study of the performance of Sezawa surface acoustic wave (SAW) devices in SweGaN QuanFINE® ultrathin GaN/SiC platform, reaching frequencies above 14 GHz for the first time. Sezawa mode frequency scaling is achieved due to the elimination of the thick buffer layer typically present in epitaxial GaN technology. Finite element analysis (FEA) is first performed to find the range of frequencies over which the Sezawa mode is supported in the grown structure.

Origin of the anomalous temperature evolution of photoluminescence peak energy in degenerate InN nanocolumns.

Photoluminescence (PL) behaviour in InN nanocolumns reveal decreasing, increasing and near invariant peak energies (E(PL)) as a function of temperature. Samples, having E(PL)~0.730 eV at 20 K, showed temperature invariance of E(PL).