Characterization of nanoscale atomic motion of Si in polycrystalline Cu layer.

Atomic migration of silicon through grain boundaries of a thin polycrystalline Cu film and island formation on the Cu surface were studied in the temperature range of 403-520 K. Samples used in these experiments was prepared on Si(111) wafers by room temperature magnetron sputtering and they consisted of amorphous Si layer (80 nm) and polycrystalline Cu layer (40 nm). The silicon layer served as the source layer of diffusion, while the copper surface was the accumulation surface.

Calcium silicate layer on titanium fabricated by electrospray deposition.

Titanium and its alloys have been used as implant materials. Non-ideal osseointegration of the implant materials has facilitated the development of the bioactive coatings on the implant surfaces. In this work, the bioactive calcium silicate (CaSi) powder prepared in a green synthesis route was used to cover the surface of Ti implants by a facile electrospray deposition method.