Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress.

Silicon carbide (SiC) has been envisioned as an almost ideal material for power electronic devices; however, device reliability is still a great challenge. Here we investigate the reliability of commercial 1.2-kV 4H-SiC MOSFETs under repetitive unclamped inductive switching (UIS).

Research and Development of a COVID-19 Tracking System in Order to Implement Analytical Tools to Reduce the Infection Risk.

The whole world is currently focused on COVID-19, which causes considerable economic and social damage. The disease is spreading rapidly through the population, and the effort to stop the spread is entirely still failing. In our article, we want to contribute to the improvement of the situation.