Combination of Solid-State and Electrochemical Impedance Spectroscopy To Explore Effects of Porosity in Sol-Gel-Derived BaTiO Thin Films.

BaTiO thin films were deposited onto polycrystalline Pt using a dip-coating technique, with annealing temperatures of 750-900 °C. To avoid film imperfections such as cracking or pinholes, key conditions, including aging periods, water content, and stirring speeds, were refined to produce a pinhole-free, uniform film with some porosity. Whereas those coated a single time short circuited during electrical characterization, this could be avoided in films produced by multiple coating cycles.

Synthesis and properties of MoCl complexes with thio- and seleno-ethers and their use for chemical vapour deposition of MoSe and MoS films.

Treatment of trans-[MoCl(MeCN)] with L (L = MeS, MeSe, THT, ½MeSCHCHSMe) in CHCl solution, or reaction of MoCl with excess L' (L' = BuS, BuSe, ½MeSCHCHSMe, ½PrSCHCHSPr, ½MeSCHCHCHSMe, ½MeSeCHCHCHSeMe) in MeCN, produces the Mo(iv) complexes, [MoCl(L)] and [MoCl(L')], respectively, in good yield. The new complexes have been characterised by IR and UV-vis spectroscopy, elemental analysis and magnetic measurements, whilst crystal structure analyses of trans-[MoCl(MeS)], cis-[MoCl{RS(CH)SR}] (R = Me, Pr) and cis-[MoCl{MeS(CH)SMe}] confirmed their identities and distorted octahedral geometries. The potential of [MoCl(BuE)] (E = S, Se) as the first examples of molybdenum halide derived single source CVD precursors for the growth of MoE thin films was first probed by TGA, which showed multi-step decomposition processes, with the masses of the final residues consistent with MoSe (E = Se) and MoCl (E = S), respectively.