BiSe Growth on (001) GaAs Substrates for Terahertz Integrated Systems.

Terahertz (THz) technologies have been of interest for many years due to the variety of applications including gas sensing, nonionizing imaging of biological systems, security and defense, and so forth. To date, scientists have used different classes of materials to perform different THz functions. However, to assemble an on-chip THz integrated system, we must understand how to integrate these different materials.

Engineering Efficient Photon Upconversion in Semiconductor Heterostructures.

Photon upconversion is a photophysical process in which two low-energy photons are converted into one high-energy photon. Photon upconversion has broad appeal for a range of applications from biomedical imaging and targeted drug release to solar energy harvesting. Current upconversion nanosystems, including lanthanide-doped nanocrystals and triplet-triplet annihilation molecules, have achieved upconversion quantum yields on the order of 10-30%.

Reducing thermal conductivity of crystalline solids at high temperature using embedded nanostructures.

Thermal conductivity of a crystalline solid at high temperature is dominated by the Umklapp process because the number of high frequency phonons increases with temperature. It is challenging to reduce the thermal conductivity of crystalline solids at high temperature although it is widely known that, by increasing the atomic defect concentration, thermal conductivity of crystalline solids can be reduced at low temperature. By increasing the concentration of ErAs nanoparticles in In 0.

Ultrafast optical switching of terahertz metamaterials fabricated on ErAs/GaAs nanoisland superlattices.

We demonstrate optical switching of electrically resonant terahertz planar metamaterials fabricated on ErAs/GaAs nanoisland superlattice substrates. Photoexcited charge carriers in the superlattice shunt the capacitive regions of the constituent elements, thereby modulating the resonant response of the metamaterials. A switching recovery time of 20 ps results from fast carrier recombination in the ErAs/GaAs superlattice substrates.

Active terahertz metamaterial devices.

The development of artificially structured electromagnetic materials, termed metamaterials, has led to the realization of phenomena that cannot be obtained with natural materials. This is especially important for the technologically relevant terahertz (1 THz = 10(12) Hz) frequency regime; many materials inherently do not respond to THz radiation, and the tools that are necessary to construct devices operating within this range-sources, lenses, switches, modulators and detectors-largely do not exist. Considerable efforts are underway to fill this 'THz gap' in view of the useful potential applications of THz radiation.