Scalable Memdiodes Exhibiting Rectification and Hysteresis for Neuromorphic Computing.

Metal-NbO-metal memdiodes exhibiting rectification, hysteresis, and capacitance are demonstrated for applications in neuromorphic circuitry. These devices do not require any post-fabrication treatments such as filament creation by electroforming that would impede circuit scalability. Instead these devices operate due to Poole-Frenkel defect controlled transport where the high defect density is inherent to the NbO deposition rather than post-fabrication treatments.