Photoluminescent Semiconducting Graphene Nanoribbons via Longitudinally Unzipping Single-Walled Carbon Nanotubes.

The lack of a sizeable band gap has so far prevented graphene from building effective electronic and optoelectronic devices despite its numerous exceptional properties. Intensive theoretical research reveals that a band gap larger than 1 eV can only be achieved in sub-3 nm wide graphene nanoribbons (GNRs), but real fabrication of such ultranarrow GNRs still remains a critical challenge. Herein, we demonstrate an approach for the synthesis of ultranarrow and photoluminescent semiconducting GNRs by longitudinally unzipping single-walled carbon nanotubes.

Graphene bridge rectifier based on self-switching diode arrays.

Here, we present theory and measurements for a bridge rectifier formed from arrays of graphene self-switching diodes (GSSDs). Despite graphene's lack of a bandgap and high carrier concentration causing a reduced rectification ratio, the extremely high carrier mobility will allow GSSDs to work at frequencies well into the THz region. Compared with a single SSD array, the bridge rectifier structure allows for full-wave rectification of an AC signal.